STD8NM60N [STMicroelectronics]

STD8NM60N Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 560pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 28A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STD8NM60N Features

the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 28A.

STD8NM60N Applications

There are a lot of STMicroelectronics
STD8NM60N applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters