STDRIVEG212Q [STMicroelectronics]

As a part of the STDRIVE product family, the STDRIVEG212 is a 220 V high-speed half-bridge gate driver optimized for 5 V driving enhanced-mode GaN HEMTs.

The high-side driver section is designed to support a voltage rail up to 220 V and can easily be supplied by the integrated bootstrap diode.

High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.

The STDRIVEG212 features supply UVLOs tailored to hard-switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.

The input pins extended range allows for easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or in burst mode.

The STDRIVEG212 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.

• High voltage rail up to 220 V
• dV/dt transient immunity ±200 V/ns
• Driver with separated sink and source path for optimal driving:
  • 1.8 A and 1.2 Ω sink
  • 0.8 A and 4.0 Ω source
• High-side and low-side linear regulators for 5 V gate driving voltage
• Fast high-side startup time: 5 µs
• 50 ns propagation delay, 15 ns minimum output pulse
• High switching frequency (> 1 MHz)
• Embedded bootstrap diode
• Full support of GaN hard-switching operation
• Comparator for overcurrent detection with Smart Shutdown
• UVLO function on VCC, V_HS, and V_LS
• Separated logic inputs and shutdown pin
• Fault pin for overcurrent, overtemperature and UVLO reporting
• Stand-by function for low consumption mode
• Separated PGND for Kelvin source driving and current shunt compatibility
• 3.3 V to 20 V compatible inputs with hysteresis and pull-down