BEST SELL
UCC28070APW
Texas Instruments
RFQ List
Yes. STGF19NC60HD by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.
Pricing for STGF19NC60HD can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.
STGF19NC60HD is a STMicroelectronics Transistors with Packaging: Tube and Collector Emitter Saturation Voltage: 1.8V and Collector Emitter Breakdown Voltage: 600V. Review the product details or submit an RFQ if you need confirmation before purchase.
Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.
If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.
Yes. If STGF19NC60HD is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.
Looking for Pricing? Contact us for volume pricing.
IMPORTANT NOTICE
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
The STGF19NC60HD is a very fast IGBT with an ultrafast diode that operates at 19 A and 600 V. The device is a high-speed IGBT. It makes use of the sophisticated Power MESHTM technology, which provides an outstanding balance of switching performance and minimal on-state behavior. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P?N?P?N) that are controlled by a metal?oxide?semiconductor (MOS) gate structure.
? High-current
? Low-saturation-voltage capability of bipolar transistors
? High current-handling capabilities
? Low on-voltage drop (VCE(sat))
? Very soft ultrafast recovery anti-parallel diode
? High-frequency motor drives
? SMPS and PFC in both hard switch and resonant topologies
? Power transistor
? Switched-mode power supplies
? Traction motor control
? Induction heating
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
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