STGWA25H120DF2 [STMicroelectronics]

Name: STGWA25H120DF2
Brand: STMicroelectronics
SKU: STGWA25H120DF2

Part No:

STGWA25H120DF2

Transistors

Manufacturer:

STMicroelectronics

Description:

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Package:

-

RoHS Status:

-

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Part Life Cycle Code

Active

Package Description

Reach Compliance Code

compliant

ECCN Code

EAR99

Factory Lead Time

15 Weeks

Collector Current-Max (IC)

50 A

Collector-Emitter Voltage-Max

1200 V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate-Emitter Thr Voltage-Max

7 V

Gate-Emitter Voltage-Max

20 V

JEDEC-95 Code

TO-247

JESD-30 Code

R-PSFM-T3

JESD-609 Code

Number of Elements

Number of Terminals

Operating Temperature-Max

175 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

375 W

Surface Mount

Terminal Finish

Matte Tin (Sn) - annealed

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

POWER CONTROL

Transistor Element Material

SILICON

Turn-off Time-Nom (toff)

339 ns

Turn-on Time-Nom (ton)

41 ns

VCEsat-Max

2.6 V

Products Detail

STGWA25H120DF2 Description

The STGWA25H120DF2 IGBT was created employing a cutting-edge, exclusive trench gate field-stop structure. The device is a member of the H series of IGBTs, which stands for the best conduction and switching loss compromise for high-switching frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce a safer paralleling operation.

STGWA25H120DF2 Features

Safe paralleling
Minimized tail current
Low thermal resistance
High-speed switching series
VCE(sat) = 2.1 V (typ.) @ IC = 25 A
Very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
5 ?s minimum short circuit withstand time at TJ = 150 °C

STGWA25H120DF2 Applications

Automotive
Enterprise systems
Communications equipment

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STGWA25H120DF2 Datasheet

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.