STH6N95K5-2 [STMicroelectronics]

STH6N95K5-2 Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 90 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 100V.This device conducts a continuous drain current (ID) of 6A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 6A.Pulsed drain current is maximum rated peak drain current 24A.A normal operation of the DS requires keeping the breakdown voltage above 950V.This transistor requires a drain-source voltage (Vdss) of 950V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STH6N95K5-2 Features

the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 950V drain to source voltage (Vdss)

STH6N95K5-2 Applications

There are a lot of STMicroelectronics
STH6N95K5-2 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching