STI200N6F3 [STMicroelectronics]

STI200N6F3 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 918 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6265pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STI200N6F3 Features

the avalanche energy rating (Eas) is 918 mJ
a continuous drain current (ID) of 120A
based on its rated peak drain current 480A.
a 60V drain to source voltage (Vdss)

STI200N6F3 Applications

There are a lot of STMicroelectronics
STI200N6F3 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools