STI55NF03L [STMicroelectronics]

STI55NF03L Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1265pF @ 25V.This device conducts a continuous drain current (ID) of 55A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 220A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

STI55NF03L Features

the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 55A
based on its rated peak drain current 220A.
a 30V drain to source voltage (Vdss)

STI55NF03L Applications

There are a lot of STMicroelectronics
STI55NF03L applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching