STP20N65M5 [STMicroelectronics]

STP20N65M5 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 270 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1345pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 18A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 43 ns.Peak drain current is 72A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 43 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP20N65M5 Features

the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 72A.

STP20N65M5 Applications

There are a lot of STMicroelectronics
STP20N65M5 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies