
K4B2G1646F-BCNB
SAMSUNG

The STPRDC02 is a 60 V, high-voltage, full-bridge MOSFET driver IC to implement a control scheme specific to primary-side in STVCOT™-based resonant / non-resonant converters. It provides four high-current gate drive outputs, each capable of driving one or more N-channel Power MOSFETs.
The device features programmable dead-time control to optimize MOSFETs switching and reduce losses in order to optimize the overall efficiency.
Two PWM inputs control the two half-bridge sections independently. EN pin, when low, forces all the gate drive to low regardless of the PWMs status implementing an HiZ.
Overcurrent protection is programmable and senses through a common shunt resistance to be connected in series to the Low-Side power MOSFETs.
The STPRDC02 is available in VFQFPN, 4x4 mm package with exposed pad.
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