Part No:
STU2NK100Z
Category:
Transistors
Description:
MOSFET (Metal Oxide) N-Channel Tube 8.5 ? @ 900mA, 10V ±30V 499pF @ 25V 16nC @ 10V 1000V TO-251-3 Short Leads, IPak, TO-251AA
Package:
-
Production Status:
In Stock Status:
Specification
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material
Moisture Sensitivity Level (MSL)
Terminal Finish
Matte Tin (Sn) - annealed
Peak Reflow Temperature (Cel)
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain to Source Breakdown Voltage
Pulsed Drain Current-Max (IDM)
Products Detail
STU2NK100Z Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 499pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.85A amps.In this device, the drain-source breakdown voltage is 1kV and VGS=1kV, so the drain-source breakdown voltage is 1kV in this case.It is [41.5 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 7.4A.A turn-on delay time of 7.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3.75V.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
STU2NK100Z Features
a continuous drain current (ID) of 1.85A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 41.5 ns
based on its rated peak drain current 7.4A.
a threshold voltage of 3.75V
a 1000V drain to source voltage (Vdss)
STU2NK100Z Applications
There are a lot of STMicroelectronics
STU2NK100Z applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
Key Features
No key features available
Application scenarios
No application scenarios available
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