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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STW19NM60N STMicroelectronics

    STW19NM60N [STMicroelectronics]

    STW19NM60N
    STW19NM60N

    Part No:

    STW19NM60N

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 285m ? @ 6.5A, 10V ±25V 1000pF @ 50V 35nC @ 10V TO-247-3

    RoHS Status:

    Product FAQ

    1. Is STW19NM60N available for RFQ?

    Yes. STW19NM60N by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STW19NM60N?

    Pricing for STW19NM60N can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STW19NM60N?

    STW19NM60N is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 13A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STW19NM60N?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STW19NM60N be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STW19NM60N?

    Yes. If STW19NM60N is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STW19NM60N

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Factory Lead Time
    16 Weeks
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-247-3
    Number of Pins
    3
    Operating Temperature
    -55°C~150°C TJ
    Packaging
    Tube
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    ECCN Code
    EAR99
    Technology
    MOSFET (Metal Oxide)
    Base Part Number
    STW19N
    Power Dissipation-Max
    110W Tc
    Element Configuration
    Single
    Turn On Delay Time
    12 ns
    FET Type
    N-Channel
    Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 50V
    Current - Continuous Drain (Id) @ 25°C
    13A Tc
    Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
    Rise Time
    15ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±25V
    Fall Time (Typ)
    25 ns
    Turn-Off Delay Time
    55 ns
    Continuous Drain Current (ID)
    13A
    Gate to Source Voltage (Vgs)
    25V
    Drain to Source Breakdown Voltage
    600V
    Height
    20.15mm
    Length
    15.75mm
    Width
    5.15mm
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant

    Products Detail

    STW19NM60N Overview


    Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1000pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

    STW19NM60N Features


    a continuous drain current (ID) of 13A
    a drain-to-source breakdown voltage of 600V voltage
    the turn-off delay time is 55 ns


    STW19NM60N Applications


    There are a lot of STMicroelectronics
    STW19NM60N applications of single MOSFETs transistors.


    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
    • Industrial Power Supplies

    Documents

    Datasheets:

    STW19NM60NSTW19NM60N-STMicroelectronics-datasheet-16349984.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
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