Name: DRV7308RENR
Brand: Texas Instruments
SKU: DRV7308RENR

DRV7308RENR [Texas Instruments]

Part No:

DRV7308RENR

Power Supplies

Manufacturer:

Texas Instruments

Description:

650V, 205mΩ 3-phase integrated GaN intelligent power module (IPM) with protection and current sense

Package:

-

RoHS Status:

-

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Rating

Catalog

Architecture

Integrated FET

Control interface

6xPWM

Peak output current (A)

RDS(ON) (HS + LS) (mΩ)

250

VDS (max) (V)

650

Features

Integrated FETs

Operating temperature range (°C)

-40 to 125

Package

VQFN (REN)

Pins

Size

144 mm² 12 x 12

Package

VQFN (REN)

Pins

Size

144 mm² 12 x 12

REACH Status

—

RoHS Status

Products Detail

The DRV7308 is a three-phase intelligent power module (IPM) that consists of 205mΩ, 650V e-mode Gallium-Nitride (GaN) for driving three-phase BLDC/PMSM motors up to 450V DC rails. The applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal (six step) current control of BLDC motors. The device helps to achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application in a QFN 12mm x 12mm package at 20kHz switching frequency, eliminating the need for heat sink. The device helps to achieve ultra quiet operation, with very low dead time. The integrated bootstrap rectifier with bootstrap current limit eliminates the need for an external bootstrap diode.

Three-phase PWM motor driver with integrated 650V enhancement mode GaN FETs
Up to 450V operating voltage
- 650V absolute maximum voltage
High output current capability: 5A Peak current
Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
Low distortion: Ultra-low propagation delay < 135ns, Ultra-low adaptive dead time < 200ns
Integrated gate drives with slew rate control of phase node voltage
- Slew rate options from 5V/ns to 40V/ns
Integrated fast bootstrap GaN rectifier
Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
Supports up to 100kHz hard switching
Integrates an amplifier for current sensing
Supports 3.3V and 5V logic inputs, up to 20V
BRAKE pin to turn on all low side GaN FETs
Integrated temperature sensor
>1.6mm clearance of motor phase (OUTx) to the adjacent pins.
2mm clearance between VM and GND
Integrated protection features
- GVDD and bootstrap under voltage lockout
- Over current protection for low-side GaN FET
- Over temperature protection
- PWM adaptive dead time insertion
- Current limit protection for all three phases
- Fault condition indication pin (nFAULT)

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Three-phase PWM motor driver with integrated 650V enhancement mode GaN FETs
Up to 450V operating voltage
- 650V absolute maximum voltage
High output current capability: 5A Peak current
Low conduction loss: Low on-state resistance per GaN FET: 205mΩ RDS(ON) at TA = 25°C
Low switching loss: Zero reverse recovery, low output capacitance, slew rate control
Low distortion: Ultra-low propagation delay < 135ns, Ultra-low adaptive dead time < 200ns
Integrated gate drives with slew rate control of phase node voltage
- Slew rate options from 5V/ns to 40V/ns
Integrated fast bootstrap GaN rectifier
Low-side GaN FET open source pins to support 1- or 2- or 3-shunt current sensing
Supports up to 100kHz hard switching
Integrates an amplifier for current sensing
Supports 3.3V and 5V logic inputs, up to 20V
BRAKE pin to turn on all low side GaN FETs
Integrated temperature sensor
>1.6mm clearance of motor phase (OUTx) to the adjacent pins.
2mm clearance between VM and GND
Integrated protection features
- GVDD and bootstrap under voltage lockout
- Over current protection for low-side GaN FET
- Over temperature protection
- PWM adaptive dead time insertion
- Current limit protection for all three phases
- Fault condition indication pin (nFAULT)