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    Part number
    Part number
    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. 2N6517-BP Unknown

    2N6517-BP [Unknown]

    2N6517-BP
    2N6517-BP

    Part No:

    2N6517-BP

    Category:

    Transistors

    Manufacturer:

    Unknown

    Description:

    NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Through Hole

    RoHS Status:

    Product FAQ

    1. Is 2N6517-BP available for RFQ?

    Yes. 2N6517-BP by Unknown is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for 2N6517-BP?

    Pricing for 2N6517-BP can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of 2N6517-BP?

    2N6517-BP is a Unknown Transistors with Voltage - Collector Emitter Breakdown (Max): 350V and DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for 2N6517-BP?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can 2N6517-BP be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to 2N6517-BP?

    Yes. If 2N6517-BP is unavailable, obsolete, or does not meet your required lead time, we can help check similar Unknown Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    2N6517-BP

    Manufacturer:

    Unknown

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mounting Type
    Through Hole
    Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
    Surface Mount
    NO
    Transistor Element Material
    SILICON
    Operating Temperature
    -55°C~150°C TJ
    JESD-609 Code
    e3
    Pbfree Code
    yes
    Part Status
    Last Time Buy
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Terminal Finish
    Matte Tin (Sn)
    Terminal Position
    BOTTOM
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Pin Count
    3
    JESD-30 Code
    O-PBCY-T3
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE
    Power - Max
    625MW
    Polarity/Channel Type
    NPN
    Transistor Type
    NPN
    DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 30mA 10V
    Current - Collector Cutoff (Max)
    50nA ICBO
    Vce Saturation (Max) @ Ib, Ic
    1V @ 5mA, 50mA
    Voltage - Collector Emitter Breakdown (Max)
    350V
    Current - Collector (Ic) (Max)
    500mA
    Transition Frequency
    40MHz
    Frequency - Transition
    200MHz
    Turn Off Time-Max (toff)
    3500ns
    Turn On Time-Max (ton)
    200ns
    RoHS Status
    RoHS Compliant

    Products Detail

    2N6517-BP Overview


    In this device, the DC current gain is 30 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.40MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 350V.

    2N6517-BP Features


    the DC current gain for this device is 30 @ 30mA 10V
    the vce saturation(Max) is 1V @ 5mA, 50mA
    a transition frequency of 40MHz


    2N6517-BP Applications


    There are a lot of Micro Commercial Co
    2N6517-BP applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Datasheets:

    2N6515, 2N6517, 2N6519, 2N6520
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
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