DG405DJ-E3 [Vishay]

Built on the Vishay Siliconix proprietary high-voltage silicon-gate process to achieve high voltage rating and superior switch on/off performance, break-before-make is guaranteed for the SPDT configurations. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to 30 V peak-to-peak when off. On-resistance is very flat over the full ± 15 V analog range, rivaling JFET performance without the inherent dynamic range limitations.