DG405DY-E3 [Vishay]

Built on the Vishay Siliconix proprietary high-voltage silicon-gate process to achieve high voltage rating and superior switch on/off performance, break-before-make is guaranteed for the SPDT configurations. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to 30 V peak-to-peak when off. On-resistance is very flat over the full ± 15 V analog range, rivaling JFET performance without the inherent dynamic range limitations. The three devices in this series are differentiated by the type of switch action as shown in the functional block diagrams.