IRC644PBF [Vishay]

IRC644PBF Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 550 mJ.A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 49 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 56A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRC644PBF Features

the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 49 ns
based on its rated peak drain current 56A.
a 250V drain to source voltage (Vdss)

IRC644PBF Applications

There are a lot of Vishay Siliconix
IRC644PBF applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples