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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRF540PBF Siliconix

    IRF540PBF [Siliconix]

    IRF540PBF
    IRF540PBF

    Part No:

    IRF540PBF

    Category:

    Transistors

    Manufacturer:

    Siliconix

    Description:

    Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

    RoHS Status:

    Product FAQ

    1. Is IRF540PBF available for RFQ?

    Yes. IRF540PBF by Siliconix is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRF540PBF?

    Pricing for IRF540PBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRF540PBF?

    IRF540PBF is a Siliconix Transistors with Thermal Resistance Junction To Ambient: 62°C/W and Body Diode Reverse Recovery Charge Max: 2.8 µC. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRF540PBF?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRF540PBF be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRF540PBF?

    Yes. If IRF540PBF is unavailable, obsolete, or does not meet your required lead time, we can help check similar Siliconix Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRF540PBF

    Manufacturer:

    Siliconix

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Ambient
    62°C/W
    Gate Source Voltage
    ±20V
    Continuous Drain Current (100C)
    20A
    Continuous Drain Current (25C)
    28A
    Drain Source Voltage
    100V
    Pulsed Drain Current
    110A
    Thermal Resistance Junction To Case
    1.0°C/W
    Input Capacitance
    1700pF
    Output Capacitance
    560pF
    Total Gate Charge
    72 nC
    Reverse Transfer Capacitance
    120pF
    Operating Temperature
    -55°C ~ 175°C
    Package
    TO-220AB
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Body Diode Reverse Recovery Charge Max
    2.8 µC
    Body Diode Reverse Recovery Charge Min
    1.3 µC
    Body Diode Reverse Recovery Time Max
    360 ns
    Body Diode Reverse Recovery Time Min
    180 ns
    Body Diode Voltage Max
    2.5V
    Configuration
    Single
    Continuous Source Drain Diode Current
    28A
    Drain Source Breakdown Voltage
    100V
    Drain Source On Resistance
    0.077Ω
    Fall Time
    43 ns
    Forward Transconductance Min
    8.7 S
    Gate Drain Charge Max
    32 nC
    Gate Input Resistance Max
    3.6Ω
    Gate Input Resistance Min
    0.5Ω
    Gate Source Charge Max
    11 nC
    Gate Source Leakage
    ±100 nA
    Gate Source Threshold Voltage
    2.0V ~ 4.0V
    Internal Drain Inductance
    4.5nH
    Internal Source Inductance
    7.5nH
    Linear Derating Factor
    1.0W/°C
    Max Power Dissipation
    150W
    Mounting Torque
    10 lbf·in (1.1 N·m)
    Peak Diode Recovery Dv Dt
    5.5V/ns
    Pulsed Diode Forward Current
    110A
    Repetitive Avalanche Current
    28A
    Repetitive Avalanche Energy
    15 mJ
    Rise Time
    44 ns
    Single Pulse Avalanche Energy
    230 mJ
    Soldering Temperature
    300°C
    Thermal Resistance Case To Sink
    0.50°C/W
    Turn Off Delay Time
    53 ns
    Turn On Delay Time
    11 ns
    Vds Temperature Coefficient
    0.13V/°C

    Products Detail

    Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

    Key Features

    • Dynamic dV/dt rating
    • Repetitive avalanche rated
    • 175 °C operating temperature
    • Fast switching
    • Ease of paralleling
    • Simple drive requirements
    • VDS=100V
    • RDS(on)=0.077Ω
    • Qg max=72nC
    • Configuration: Single

    Application scenarios

    • Commercial
    • industrial
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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