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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRF634SPBF Siliconix
    Product FAQ

    1. Is IRF634SPBF available for RFQ?

    Yes. IRF634SPBF by Siliconix is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRF634SPBF?

    Pricing for IRF634SPBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRF634SPBF?

    IRF634SPBF is a Siliconix Transistors with Thermal Resistance Junction To Ambient Pcb Mount: 40°C/W and Thermal Resistance Junction To Ambient: 62°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRF634SPBF?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRF634SPBF be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRF634SPBF?

    Yes. If IRF634SPBF is unavailable, obsolete, or does not meet your required lead time, we can help check similar Siliconix Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRF634SPBF

    Manufacturer:

    Siliconix

    Looking for Pricing? Contact us for volume pricing.

    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    IRF634SPBF [Siliconix]

    IRF634SPBF
    IRF634SPBF

    Part No:

    IRF634SPBF

    Category:

    Transistors

    Manufacturer:

    Siliconix

    Description:

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

    RoHS Status:

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Ambient
    62°C/W
    Power Dissipation (25C)
    74W
    Gate Source Voltage
    ±20V
    Continuous Drain Current (100C)
    5.1A
    Continuous Drain Current (25C)
    8.1A
    Pulsed Drain Current
    32A
    Thermal Resistance Junction To Case
    1.7°C/W
    Input Capacitance
    770pF
    Output Capacitance
    190pF
    Total Gate Charge
    41 nC
    Reverse Transfer Capacitance

    Products Detail

    N-Channel Power MOSFET in D2PAK (TO-263) package. Features include Halogen-free, Surface Mount, available in Tape and Reel, dynamic dV/dt rating, repetitive avalanche rated, fast switching, ease of paralleling, and simple drive requirements. Compliant to RoHS Directive 2002/95/EC.

    Key Features

    • Halogen-free, Surface Mount, Tape and Reel, Dynamic dV/dt Rating, Repetitive Avalanche Rated, Fast Switching, Ease of Paralleling, Simple Drive Requirements, RoHS Compliant

    Documents

    Datasheets:

    IRF634S, SiHF634S
    Featured Product
    52pF
    Operating Temperature
    -55°C ~ 150°C
    Supply Voltage
    250V
    Package
    D2PAK (TO-263)
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Packing
    Tray; Tape and reel
    Body Diode Reverse Recovery Charge
    1.2 µC
    Body Diode Reverse Recovery Time
    220 ns
    Body Diode Voltage
    2.0V
    Continuous Source Drain Diode Current
    8.1A
    Drain Source Breakdown Voltage
    250V
    Drain Source On Resistance
    0.45Ω
    Fall Time
    19 ns
    Forward Transconductance
    1.6 S
    Gate Drain Charge
    22 nC
    Gate Source Charge
    6.5 nC
    Gate Source Leakage
    ±100 nA
    Gate Source Threshold Voltage
    2.0V ~ 4.0V
    Internal Drain Inductance
    4.5nH
    Internal Source Inductance
    7.5nH
    Power Dissipation Pcb 25C
    3.1W
    Pulsed Diode Forward Current
    32A
    Rise Time
    21 ns
    Thermal Resistance Junction To Ambient Pcb Mount
    40°C/W
    Turn Off Delay Time
    42 ns
    Turn On Delay Time
    9.6 ns
    Zero Gate Voltage Drain Current
    25µA

    RohsStatement:

    Vishay-company-15.pdf
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