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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRF730AS Siliconix

    IRF730AS [Siliconix]

    IRF730AS
    IRF730AS

    Part No:

    IRF730AS

    Category:

    Transistors

    Manufacturer:

    Siliconix

    Description:

    N-Channel Power MOSFET with 400V drain-source voltage, low gate charge, and ruggedized design for high-speed power switching applications.

    RoHS Status:

    Product FAQ

    1. Is IRF730AS available for RFQ?

    Yes. IRF730AS by Siliconix is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRF730AS?

    Pricing for IRF730AS can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRF730AS?

    IRF730AS is a Siliconix Transistors with Thermal Resistance Junction To Ambient: 40°C/W and Body Diode Reverse Recovery Charge Max: 2.4 µC. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRF730AS?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRF730AS be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRF730AS?

    Yes. If IRF730AS is unavailable, obsolete, or does not meet your required lead time, we can help check similar Siliconix Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRF730AS

    Manufacturer:

    Siliconix

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Ambient
    40°C/W
    Gate Source Voltage
    ±30V
    Continuous Drain Current (100C)
    3.5A
    Continuous Drain Current (25C)
    5.5A
    Drain Source Voltage
    400V
    Pulsed Drain Current
    22A
    Thermal Resistance Junction To Case
    1.7°C/W
    Input Capacitance
    600pF
    Output Capacitance
    103pF
    Total Gate Charge
    22 nC
    Reverse Transfer Capacitance
    4.0pF
    Operating Temperature
    -55°C ~ +150°C
    Package
    D2PAK (TO-263), I2PAK (TO-262)
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Avalanche Current
    5.5A
    Body Diode Reverse Recovery Charge Max
    2.4 µC
    Body Diode Reverse Recovery Charge Typ
    1.6 µC
    Body Diode Reverse Recovery Time Max
    550 ns
    Body Diode Reverse Recovery Time Typ
    370 ns
    Body Diode Voltage
    1.6V
    Breakdown Voltage
    400V
    Continuous Source Drain Diode Current
    5.5A
    Drain Source On Resistance
    1.0Ω
    Effective Output Capacitance
    45pF
    Fall Time
    16 ns
    Forward Transconductance
    3.1 S
    Gate Drain Charge
    9.3 nC
    Gate Source Charge
    5.8 nC
    Gate Source Leakage
    ±100 nA
    Gate Source Threshold Voltage
    2.0V ~ 4.5V
    Linear Derating Factor
    0.6W/°C
    Maximum Power Dissipation 25C
    74W
    Peak Diode Recovery Dv Dt
    4.6V/ns
    Pulsed Diode Forward Current
    22A
    Repetitive Avalanche Energy
    7.4 mJ
    Rise Time
    22 ns
    Single Pulse Avalanche Energy
    290 mJ
    Soldering Peak Temperature
    300°C
    Turn Off Delay Time
    20 ns
    Turn On Delay Time
    10 ns
    Zero Gate Voltage Drain Current
    25µA

    Products Detail

    The IRF730AS/SiHF730AS and IRF730AL/SiHF730AL are N-Channel Power MOSFETs featuring 400V drain-source voltage, low gate charge (Qg ≤ 22nC), and ruggedized design with improved gate, avalanche, and dynamic dV/dt ruggedness. These devices offer fully characterized capacitance and avalanche voltage/current, effective output capacitance specification, and are halogen-free and RoHS compliant. They are optimized for high-efficiency switching applications with simple drive requirements.

    Key Features

    • Halogen-free According to IEC 61249-2-21, Low Gate Charge Qg Results in Simple Drive Requirement, Improved Gate, Avalanche and Dynamic dV/dt Ruggedness, Fully Characterized Capacitance and Avalanche Voltage and Current, Effective Coss Specified, Compliant to RoHS Directive 2002/95/EC

    Application scenarios

    • Switch Mode Power Supply (SMPS)
    • Uninterruptible Power Supply
    • High Speed Power Switching
    • Single Transistor Flyback Transformer Reset
    • Single Transistor Forward Transformer Reset

    Documents

    Datasheets:

    IRF730AS,AL, SiHF730AS,ALIRF730AS-Vishay-datasheet-3164.pdfIRF730AS-Vishay-datasheet-11792180.pdf

    RohsStatement:

    Vishay-company-15.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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