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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRF830AL Siliconix

    IRF830AL [Siliconix]

    IRF830AL
    IRF830AL

    Part No:

    IRF830AL

    Category:

    Transistors

    Manufacturer:

    Siliconix

    Description:

    N-Channel Power MOSFET with 500V drain-source voltage, 1.40Ω max R_DS(on), and 24nC max gate charge.

    RoHS Status:

    Product FAQ

    1. Is IRF830AL available for RFQ?

    Yes. IRF830AL by Siliconix is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRF830AL?

    Pricing for IRF830AL can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRF830AL?

    IRF830AL is a Siliconix Transistors with Zero Gate Voltage Drain Current 400V 125C: 250µA and Thermal Resistance Junction To Ambient: 40°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRF830AL?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRF830AL be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRF830AL?

    Yes. If IRF830AL is unavailable, obsolete, or does not meet your required lead time, we can help check similar Siliconix Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRF830AL

    Manufacturer:

    Siliconix

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Ambient
    40°C/W
    Gate Source Voltage
    ±30V
    Continuous Drain Current (100C)
    3.2A
    Continuous Drain Current (25C)
    5.0A
    Drain Source Voltage
    500V
    Pulsed Drain Current
    20A
    Thermal Resistance Junction To Case
    1.7°C/W
    Input Capacitance
    620pF
    Output Capacitance
    93pF
    Total Gate Charge
    24 nC
    Reverse Transfer Capacitance
    4.3pF
    Operating Temperature
    -55°C ~ +150°C
    Package
    D2PAK (TO-263), I2PAK (TO-262)
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Packing
    Tray; Tape and Reel
    Avalanche Current
    5.0A
    Body Diode Reverse Recovery Charge Max
    3.0 µC
    Body Diode Reverse Recovery Charge Typ
    2.0 µC
    Body Diode Reverse Recovery Time Max
    650 ns
    Body Diode Reverse Recovery Time Typ
    430 ns
    Body Diode Voltage
    1.5V
    Breakdown Voltage
    500V
    Continuous Source Drain Diode Current
    5.0A
    Drain Source On Resistance
    1.4Ω
    Effective Output Capacitance
    39pF
    Fall Time
    15 ns
    Forward Transconductance
    2.8 S
    Gate Drain Charge
    11 nC
    Gate Source Charge
    6.3 nC
    Gate Source Leakage
    ±100 nA
    Gate Source Threshold Voltage
    2.0V ~ 4.5V
    Linear Derating Factor
    0.59W/°C
    Maximum Power Dissipation 25C
    74W
    Peak Diode Recovery Dv Dt
    5.3V/ns
    Pulsed Diode Forward Current
    20A
    Repetitive Avalanche Energy
    7.4 mJ
    Rise Time
    21 ns
    Single Pulse Avalanche Energy
    230 mJ
    Soldering Peak Temperature
    300°C
    Turn Off Delay Time
    21 ns
    Turn On Delay Time
    10 ns
    Zero Gate Voltage Drain Current 400V 125C
    250µA
    Zero Gate Voltage Drain Current 500V
    25µA

    Products Detail

    N-Channel MOSFET with low gate charge (24nC max), low on-resistance (1.40Ω max at V_GS=10V), and high breakdown voltage (500V). Features include improved gate and avalanche ruggedness, characterized capacitance and avalanche voltage/current, and compliance with RoHS and halogen-free standards. Available in D2PAK (TO-263) and I2PAK (TO-262) packages.

    Key Features

    • Halogen-free (IEC 61249-2-21), Low gate charge for simple drive, Improved gate and avalanche ruggedness, Fully characterized capacitance and avalanche, Effective output capacitance (C_oss), RoHS compliant

    Application scenarios

    • Switch Mode Power Supply (SMPS)
    • Uninterruptible Power Supply
    • High speed power switching
    • Two Transistor Forward
    • Half Bridge and Full Bridge

    Documents

    Datasheets:

    IRF830AS,AL, SiHF830AS,AL

    RohsStatement:

    Vishay-company-15.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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