IRF830ASTRL [Siliconix]

N-Channel Power MOSFET with 500V drain-source voltage, low on-resistance (1.40Ω max at V_GS=10V), and low gate charge (24nC max). Features include ruggedness against avalanche and dynamic dV/dt, characterized capacitance, and RoHS compliance. Suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications in topologies such as two transistor forward, half bridge, and full bridge.