IRF830BPBF

Name: IRF830BPBF
Brand: Vishay
SKU: IRF830BPBF
Availability: InStock

Product FAQ

1. Is IRF830BPBF available for RFQ?

Yes. IRF830BPBF by Vishay is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for IRF830BPBF?

Pricing for IRF830BPBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of IRF830BPBF?

IRF830BPBF is a Vishay Transistors with Drain Source Breakdown Voltage Temp Coefficient: 0.58V/°C and Thermal Resistance Junction To Ambient: 62°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for IRF830BPBF?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can IRF830BPBF be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to IRF830BPBF?

Part No:

Transistors

Manufacturer:

Vishay

Description:

N-Channel 500V (D-S) Power MOSFET with low area specific on-resistance, low input capacitance, and high body diode ruggedness.

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Thermal Resistance Junction To Ambient

62°C/W

Gate Source Voltage

±30V

Continuous Drain Current (100C)

3.4A

Continuous Drain Current (25C)

5.3A

Drain Source Voltage

500V

Pulsed Drain Current

10A

Thermal Resistance Junction To Case

1.2°C/W

Input Capacitance

325pF

Output Capacitance

34pF

Total Gate Charge

20 nC

Reverse Transfer Capacitance

Products Detail

The IRF830B is a D Series Power MOSFET featuring optimal design with low area specific on-resistance, low input capacitance (C_iss), reduced capacitive switching losses, high body diode ruggedness, and avalanche energy rating (UIS). It offers optimal efficiency and operation with low cost, simple gate drive circuitry, low figure-of-merit (FOM: R_on × Q_g), and fast switching. Suitable for high-voltage switching applications.