IRFD010PBF [Vishay]

IRFD010PBF Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 250pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.7A.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 200mOhm exists between the drain and source.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 50V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFD010PBF Features

a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 50V drain to source voltage (Vdss)

IRFD010PBF Applications

There are a lot of Vishay Siliconix
IRFD010PBF applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification