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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRFIBC30GPBF Vishay

    IRFIBC30GPBF [Vishay]

    IRFIBC30GPBF
    IRFIBC30GPBF

    Part No:

    IRFIBC30GPBF

    Category:

    Transistors

    Manufacturer:

    Vishay

    Description:

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

    RoHS Status:

    Product FAQ

    1. Is IRFIBC30GPBF available for RFQ?

    Yes. IRFIBC30GPBF by Vishay is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRFIBC30GPBF?

    Pricing for IRFIBC30GPBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRFIBC30GPBF?

    IRFIBC30GPBF is a Vishay Transistors with Zero Gate Voltage Drain Current 480v 125c Max: 500µA and Drain Source Voltage Temperature Coefficient: 0.62V/°C. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRFIBC30GPBF?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRFIBC30GPBF be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRFIBC30GPBF?

    Yes. If IRFIBC30GPBF is unavailable, obsolete, or does not meet your required lead time, we can help check similar Vishay Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRFIBC30GPBF

    Manufacturer:

    Vishay

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Gate Source Voltage
    ±20V
    Continuous Drain Current (100C)
    1.6A
    Continuous Drain Current (25C)
    2.5A
    Drain Source Voltage
    600V
    Pulsed Drain Current
    10A
    Input Capacitance
    660pF
    Output Capacitance
    86pF
    Total Gate Charge
    31 nC
    Reverse Transfer Capacitance
    19pF
    Operating Temperature
    -55°C ~ 150°C
    Package
    TO-220 FULLPAK
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Body Diode Reverse Recovery Charge Max
    4.2 µC
    Body Diode Reverse Recovery Charge Typ
    2.1 µC
    Body Diode Reverse Recovery Time Max
    810 ns
    Body Diode Reverse Recovery Time Typ
    400 ns
    Body Diode Voltage Max
    1.6V
    Continuous Source Drain Diode Current Max
    2.5A
    Drain Source Breakdown Voltage Min
    600V
    Drain Source On State Resistance Max
    2.2Ω
    Drain Source Voltage Temperature Coefficient
    0.62V/°C
    Drain To Sink Capacitance Typ
    12pF
    Fall Time
    14 ns
    Forward Transconductance Min
    2.2 S
    Gate Drain Charge Max
    17 nC
    Gate Source Charge Max
    4.6 nC
    Gate Source Leakage Max
    100 nA
    Gate Source Threshold Voltage
    2.0V ~ 4.0V
    Internal Drain Inductance Typ
    4.5nH
    Internal Source Inductance Typ
    7.5nH
    Junction To Ambient Thermal Resistance Max
    65°C/W
    Junction To Case Thermal Resistance Max
    3.6°C/W
    Linear Derating Factor
    0.28W/°C
    Max Power Dissipation
    35W
    Mounting Torque Lbf In
    10
    Mounting Torque N M
    1.1
    Peak Diode Recovery Dv Dt
    3.0V/ns
    Pulsed Diode Forward Current Max
    10A
    Repetitive Avalanche Current
    2.5A
    Repetitive Avalanche Energy
    3.5 mJ
    Rise Time
    13 ns
    Single Pulse Avalanche Energy
    250 mJ
    Soldering Peak Temperature
    300°C
    Turn Off Delay Time
    35 ns
    Turn On Delay Time
    11 ns
    Zero Gate Voltage Drain Current 480v 125c Max
    500µA
    Zero Gate Voltage Drain Current 600v Max
    100µA

    Products Detail

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK package eliminates the need for additional insulating hardware in commercial-industrial applications, providing high voltage isolation (2.5 kV RMS) and low thermal resistance between the tab and external heatsink. Features include isolated package, dynamic dV/dt rating, and lead-free availability.

    Key Features

    • Isolated Package, High Voltage Isolation = 2.5 kV RMS, Sink to Lead Creepage Distance = 4.8 mm, Dynamic dV/dt Rating, Low Thermal Resistance, Lead (Pb)-free Available

    Documents

    Datasheets:

    IRFIBC30GIRFIBC30GPBF-Vishay-datasheet-5317961.pdfIRFIBC30GPBF-Vishay-datasheet-9987657.pdfIRFIBC30GPBF-Vishay-datasheet-44060198.pdfIRFIBC30GPBF-Vishay-datasheet-85786.pdfIRFIBC30GPBF-Vishay-datasheet-21423443.pdf

    RohsStatement:

    Vishay-company-15.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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