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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRFPG50PBF Siliconix

    IRFPG50PBF [Siliconix]

    IRFPG50PBF
    IRFPG50PBF

    Part No:

    IRFPG50PBF

    Category:

    Transistors

    Manufacturer:

    Siliconix

    Description:

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

    RoHS Status:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Gate Source Voltage
    ±20V
    Continuous Drain Current (100C)
    3.9A
    Continuous Drain Current (25C)
    6.1A
    Pulsed Drain Current
    24A
    Input Capacitance
    2800pF
    Output Capacitance
    250pF
    Total Gate Charge
    190 nC
    Reverse Transfer Capacitance
    84pF
    Operating Temperature
    -55°C ~ +150°C
    Supply Voltage
    1000V
    Package
    TO-247AC

    Products Detail

    The IRFPG50 is a third-generation Power MOSFET featuring dynamic dV/dt rating, repetitive avalanche rating, isolated central mounting hole, fast switching, ease of paralleling, and simple drive requirements. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. It provides greater creepage distances between pins to meet safety specifications and features an isolated mounting hole.

    Key Features

    • Dynamic dV/dt rated, Repetitive avalanche rated, Isolated central mounting hole, Fast switching, Ease of paralleling, Simple drive requirements, Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

    Application scenarios

    • Commercial-industrial applications
    • high power circuits
    Product FAQ

    1. Is IRFPG50PBF available for RFQ?

    Yes. IRFPG50PBF by Siliconix is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRFPG50PBF?

    Pricing for IRFPG50PBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRFPG50PBF?

    IRFPG50PBF is a Siliconix Transistors with Junction To Ambient Thermal Resistance Max: 40°C/W and Continuous Source Drain Diode Current Max: 6.1A. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRFPG50PBF?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRFPG50PBF be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRFPG50PBF?

    Yes. If IRFPG50PBF is unavailable, obsolete, or does not meet your required lead time, we can help check similar Siliconix Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRFPG50PBF

    Manufacturer:

    Siliconix

    Looking for Pricing? Contact us for volume pricing.

    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Body Diode Reverse Recovery Charge Max
    5.3 µC
    Body Diode Reverse Recovery Time Max
    950 ns
    Body Diode Voltage Max
    1.8V
    Continuous Source Drain Diode Current Max
    6.1A
    Drain Source On State Resistance Max
    2.0Ω
    Fall Time
    36 ns
    Forward Transconductance Min
    5.4 S
    Gate Source Leakage Max
    ±100 nA
    Gate Source Threshold Voltage
    2.0V ~ 4.0V
    Internal Drain Inductance
    5.0nH
    Internal Source Inductance
    13nH
    Junction To Ambient Thermal Resistance Max
    40°C/W
    Junction To Case Thermal Resistance Max
    0.65°C/W
    Linear Derating Factor
    1.5W/°C
    Max Power Dissipation
    190W
    Mounting Torque
    10 lbf·in, 1.1 N·m
    Package Dimensions
    20.70 x 15.87 x 5.21 mm (max)
    Peak Diode Recovery DV Dt
    1.0V/ns
    Pulsed Diode Forward Current Max
    24A
    Repetitive Avalanche Current
    6.0A
    Repetitive Avalanche Energy
    19 mJ
    Rise Time
    35 ns
    Single Pulse Avalanche Energy
    800 mJ
    Soldering Temperature
    300°C for 10 seconds
    Turn Off Delay Time
    130 ns
    Turn On Delay Time
    19 ns
    Zero Gate Voltage Drain Current Max
    100µA
  • 30-Day Guarantee
    30-Day Guarantee
  • Fasted Delivery
    Fasted Delivery
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