Номер детали:
2N6547
Категория:
Транзисторы
Описание:
NPN 200°C TJ 1 мА 1 элемент 2 вывода SILICON NPN TO-204AA, TO-3 Трубка Шасси Монтаж
Упаковка:
-
Статус производства:
Статус наличия:
Спецификация
Mount
Chassis Mount, Through Hole
Transistor Element Material
Moisture Sensitivity Level (MSL)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Детали продукта
2N6547 Overview
Как объяснено выше, коэффициент постоянного тока учитывает скорость, с которой базовый ток протекает через коллекторный ток; поэтому коэффициент постоянного тока для этого устройства составляет 12 @ 5A 2V. Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V. In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 3A, 15A. The emitter base voltage can be kept at 9V for high efficiency. The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much. The part has a transition frequency of 6MHz. Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2N6547 Features
the DC current gain for this device is 12 @ 5A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 5V @ 3A, 15A
the emitter base voltage is kept at 9V
the current rating of this device is 15A
a transition frequency of 6MHz
2N6547 Applications
There are a lot of STMicroelectronics
2N6547 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Ключевые особенности
Ключевые особенности недоступны
Сценарии применения
Сценарии применения недоступны
Документы