TPS1100D  Description

 TPS1100 is a single P channel enhanced MOSFET. The device uses Texas Instruments' LinBiCMOS process and has been optimized for 3V or 5V power distribution in the battery power supply system. The maximum VGS (Th) of the TPS1100 is-1.5 V and the IDSS is only 0.5 ? A, making it an ideal high-end switch for low-voltage portable battery management systems that maximize battery life. The TPS1100's low RDS (conduction) and excellent AC characteristics (typical rise time of 10 ns) make it a reasonable choice for low-voltage switching applications such as pulse width modulation (PWM) controllers or power switches for motor / bridge drivers. The ultra-thin shrinking small profile package or TSSOP (PW) version has a smaller footprint and lower height, making it suitable for other P-channel MOSFET incompetent areas. Size advantage is particularly important when circuit board real estate is at a premium and height restrictions do not allow small outline integrated circuit (SOIC) packaging.

TPS1100D   Features

 Low rDS(on) . . . 0.18 ? Typ at VGS = ?10 V

 3 V Compatible

 Requires No External VCC

 TTL and CMOS Compatible Inputs

 VGS(th) = ?1.5 V Max

 Available in Ultrathin TSSOP Package (PW)

 ESD Protection Up to 2 kV Per

MIL-STD-883C, Method 3015

TPS1100D   Applications

battery power supply system

 pulse width modulation (PWM) controllers

 power switches