Discrete Semiconductors are individual semiconductor devices that perform a single electronic function within a circuit, rather than integrating multiple functions into one component. They are fundamental building blocks used to control current flow, switch signals, provide amplification, and protect circuits.
This category commonly includes:
Discrete semiconductors are typically selected to match the required electrical function and overall circuit design needs.
| Product | Manufacturer | In Stock Status | Price | Qty | RFQ | Description |
|---|---|---|---|---|---|---|
| Infineon | Available | Check Price | Get a Quote | Infineon SAK-TC375TP-96F300W AA is a high-performance AURIX™ TC3xx automotive microcontroller featuring TriCore™ multicore processing, up to 300MHz operating frequency, large embedded Flash memory, advanced safety functions, hardware security, CAN FD, FlexRay™, Ethernet, LIN, SPI, UART, ADC, and GTM timer resources. Designed for automotive ECUs, electric vehicle powertrain systems, battery management, chassis control, vehicle gateways, industrial automation, and safety-critical embedded systems, the SAK-TC375TP-96F300W AA delivers reliable real-time control, secure communication, and automotive-grade performance in a PG-LQFP-176 package. | ||
| Infineon | Available | Check Price | Get a Quote | Infineon IPB180N04S4-01 is a 40V automotive N-channel OptiMOS™-T2 power MOSFET featuring 180A continuous drain current capability, 1.3mΩ maximum RDS(on), 720A pulsed current rating, AEC-Q101 qualification, and PG-TO263-7 packaging. Designed for electric power steering (EPS), chassis control, braking systems, battery management, motor control, and high-current automotive power applications, the IPB180N04S4-01 delivers ultra-low losses, excellent thermal performance, and reliable switching capability for demanding automotive electronics. | ||
| Infineon | Available | Check Price | Get a Quote | Infineon FF450R12ME4 is a 1200V 450A EconoDUAL™ 3 dual IGBT power module featuring TRENCHSTOP™ IGBT4 technology, emitter-controlled HE diode, integrated NTC temperature sensor, and half-bridge configuration. Designed for industrial motor drives, renewable energy inverters, EV charging systems, UPS equipment, and high-power converters, the FF450R12ME4 delivers high efficiency, reliable switching performance, excellent thermal management, and advanced power density for demanding power electronics applications. | ||
| Infineon | Available | Check Price | Get a Quote | Infineon IPW65R080CFDA is a 650V automotive N-channel CoolMOS™ CFDA power MOSFET featuring 80mΩ RDS(on), 43.3A continuous drain current, integrated fast body diode, low switching losses, and PG-TO-247-3 packaging. Designed for electric vehicle traction inverters, onboard chargers, high-voltage DC-DC converters, solar inverters, and industrial power supplies, the IPW65R080CFDA delivers high efficiency, reliable switching performance, and advanced power density for modern power electronics applications. | ||
| Texas Instruments | Available | Check Price | Get a Quote | Texas Instruments ULN2003AN 7-Channel Darlington Transistor Array 50V 500mA Relay Motor Driver IC Texas Instruments ULN2003AN is a high-voltage, high-current Darlington transistor array featuring seven NPN Darlington pairs, 50V output capability, 500mA collector current per channel, and integrated clamp diodes for inductive load protection. Designed for relay drivers, stepper motors, solenoids, LED displays, industrial automation systems, and embedded control applications, the ULN2003AN provides a reliable and cost-effective interface between low-power logic circuits and high-current loads. | ||
| DIODES | Available | Check Price | Get a Quote | The SBR12U100P5-13 is a Diodes Incorporated 100V 12A Super Barrier Rectifier (SBR®) designed for high-efficiency power rectification applications. Featuring proprietary SBR technology, 100V reverse voltage rating, 12A average forward current, low 0.71V forward voltage drop at 12A, 250A surge current capability, soft and fast switching performance, low reverse leakage, and a compact PowerDI™ 5 surface-mount package, the Diodes SBR12U100P5-13 provides a reliable rectifier solution for switching power supplies, DC/DC converters, battery chargers, automotive electronics, industrial power systems, and high-current consumer electronics applications. | ||
| NEXPERIA | Available | Check Price | Get a Quote | The PBSS5140T,215 is a Nexperia 40V 1A PNP low VCEsat BISS bipolar transistor designed for efficient switching applications in automotive, industrial, and portable electronics. Featuring low collector-emitter saturation voltage, 1A collector current capability, high DC current gain at high current levels, 150MHz transition frequency, and a compact SOT23 (TO-236AB) surface-mount package, the Nexperia PBSS5140T,215 provides a reliable transistor solution for general-purpose switching, supply-line control, LCD backlighting, battery-powered equipment, LED drivers, and compact embedded electronic systems. | ||
| Onsemi | Available | Check Price | Get a Quote | The SZMM3Z3V3ST1G is an onsemi 3.3V tight-tolerance Zener diode designed for voltage regulation, circuit protection, and reference applications. Featuring a 3.3V nominal Zener voltage, ±3% tolerance, 300mW power dissipation, low leakage current, wide -65°C to +150°C operating temperature range, and a compact SOD-323 surface-mount package, the onsemi SZMM3Z3V3ST1G provides a reliable low-power voltage-control solution for automotive electronics, embedded systems, communication modules, consumer devices, and industrial applications. | ||
| NEXPERIA | Yes | Check Price | Get a Quote | The PMEG100T100ELPE-QZ is a Nexperia 100V 10A Trench MEGA Schottky barrier rectifier diode designed for high-efficiency power conversion and protection applications. Featuring 100V reverse voltage capability, 10A average forward current, low forward voltage drop, low reverse leakage current, fast switching characteristics, high surge current capability, and a compact CFP15B (SOT1289B) power SMD package, the Nexperia PMEG100T100ELPE-QZ is ideal for automotive LED lighting, DC/DC converters, switch-mode power supplies, freewheeling circuits, reverse polarity protection, OR-ing applications, and industrial power management systems. | ||
| Infineon | Available | Check Price | Get a Quote | The IRF7304TRPBF is an Infineon dual P-channel HEXFET® power MOSFET designed for compact and efficient power switching applications. Featuring two integrated P-channel MOSFETs, a -20V drain-source voltage rating, -4.3A continuous drain current capability, low 90mΩ RDS(on) at VGS=-4.5V, fast switching performance, low gate charge, and a compact SO-8 surface-mount package, the IRF7304TRPBF provides a reliable solution for battery management systems, DC/DC converters, load switches, portable electronics, LED control circuits, and embedded power-management applications. | ||
| DIODES | Available | Check Price | Get a Quote | Diodes Incorporated FCX491TA is a 40V 1A NPN silicon planar medium-power bipolar transistor featuring low saturation voltage, high DC current gain, 150MHz transition frequency, and a compact SOT-89 surface-mount package. Designed for power MOSFET gate driving, low-loss switching, relay control, DC/DC converters, and industrial power management applications, the FCX491TA provides efficient switching performance and reliable operation for compact electronic systems. | ||
| DIODES | Available | Check Price | Get a Quote | The 2N7002K-7 is a Diodes Incorporated 60V N-channel enhancement mode MOSFET designed for low-power switching and power-management applications. Featuring a 60V drain-source voltage rating, 380mA continuous drain current capability, low input capacitance, fast switching performance, integrated 2kV gate ESD protection, and a compact SOT23 surface-mount package, the Diodes 2N7002K-7 is ideal for motor controls, LED backlighting, load switches, relay drivers, level shifting circuits, power-management systems, and embedded electronic designs requiring reliable low-current MOSFET switching. | ||
| DIODES | Available | Check Price | Get a Quote | The ZXTP2012ZTA is a Diodes Incorporated 60V PNP low saturation medium-power transistor designed for efficient power switching applications. Featuring a -60V collector-emitter voltage rating, -4.3A continuous collector current capability, ultra-low VCE(sat) below -65mV at IC=-1A, approximately 32mΩ saturation resistance, high current gain performance, and a compact SOT-89 surface-mount package, the ZXTP2012ZTA provides a high-efficiency transistor solution for DC/DC converters, motor drivers, LED lighting systems, MOSFET/IGBT gate driving circuits, power switches, and industrial electronic control applications. | ||
| DIODES | Available | Check Price | Get a Quote | DFLS2100-7 is a Diodes Incorporated 2.0A, 100V high-voltage Schottky barrier rectifier in a compact PowerDI®123 surface-mount package. It features 0.86V maximum forward voltage at 2A, 50A peak surge current, 1µA low reverse leakage, 36pF total capacitance, and a -55°C to +175°C junction temperature range. It is suitable for DC/DC converters, boost diode applications, general rectification, reverse-polarity protection, blocking diode circuits, power supplies, consumer electronics, industrial boards, and compact power-path designs. | ||
| STMicroelectronics | Available | Check Price | Get a Quote | The TIP142 is a 100V, 10A NPN power Darlington transistor from STMicroelectronics, designed for high-current amplification and power switching applications. Featuring a monolithic Darlington configuration with extremely high current gain, it enables easy low-current control of high-power loads. With a 125W power dissipation rating, TO-218/TO-247 package, and suitability for both linear and switching operation, it is ideal for audio amplifiers, motor drivers, relay control, industrial automation, and power regulation systems. | ||
| Vishay | Available | Check Price | Get a Quote | The SI7615ADN-T1-GE3 is a -20V P-channel TrenchFET® power MOSFET from Vishay Siliconix, featuring ultra-low on-resistance, high current capability, and compact PowerPAK® 1212-8 surface-mount package. Designed for high-efficiency power switching, it is ideal for load switching, battery protection, DC/DC converter stages, and power management systems in industrial, automotive, and consumer electronics applications. | ||
| Onsemi | Available | Check Price | Get a Quote | The NSS60601MZ4T1G is a 60V, 6A low VCE(sat) NPN power transistor from onsemi, designed for high-efficiency switching and power management applications. Featuring ultra-low saturation voltage, high current gain, and fast switching performance (~100 MHz transition frequency), it is ideal for DC-DC converters, motor drivers, power control circuits, automotive electronics, and industrial systems. Packaged in SOT-223 (TO-261AA) and qualified to AEC-Q101 automotive standards, it delivers reliable and efficient performance in compact power designs. | ||
| Onsemi | Yes | Check Price | Get a Quote | The NCV8402ASTT1G is a self-protected low-side smart power switch from onsemi, integrating a power MOSFET with built-in protection functions including overcurrent, overtemperature, overvoltage protection, and inductive load clamping. Designed for automotive and industrial applications, it supports up to 42V operation and ~2A load current, with auto-restart fault recovery and AEC-Q101 qualification. Packaged in SOT-223, it is ideal for driving motors, solenoids, relays, LED loads, and general-purpose power switching in automotive body control, industrial automation, and embedded systems. | ||
| Infineon | Available | Check Price | Get a Quote | The BSZ075N08NS5ATMA1 is an 80V N-channel OptiMOS™ 5 power MOSFET from Infineon Technologies, designed for high-efficiency switching and power conversion applications. Featuring ultra-low RDS(on) (~7.5 mΩ), low gate charge (~24–29 nC), high current capability (~40A), and a compact PG-TSDSON-8 package, it is ideal for DC/DC converters, synchronous rectification, telecom and server power supplies, industrial power systems, and high-performance power management designs. | ||
| Onsemi | Available | Check Price | Get a Quote | The 1N5817 is a 20V 1A Schottky barrier rectifier diode from onsemi, designed for high-efficiency low-voltage power conversion. Featuring low forward voltage drop (~0.45V), fast switching performance with no reverse recovery, and a rugged DO-41 axial package, it is ideal for DC/DC converters, power supplies, reverse polarity protection, freewheeling circuits, and general-purpose rectification in industrial, automotive, and consumer electronics applications. | ||
| DIODES | Available | Check Price | Get a Quote | The 1N4148WS-7-F is a fast switching 75V small signal diode from Diodes Incorporated, designed for high-speed signal processing and protection applications. Featuring ~4 ns reverse recovery time, low junction capacitance, and a compact SOD-323 surface-mount package, it is ideal for digital switching circuits, signal clamping, RF applications, microcontroller protection, and high-frequency electronic designs. The 1N4148WS-7-F delivers reliable fast-switching performance for modern high-speed PCB systems. | ||
| Infineon | Available | Check Price | Get a Quote | IKWH75N65EH7 is a 650V 75A TRENCHSTOP™ IGBT7 discrete transistor manufactured by Infineon Technologies. Featuring an integrated anti-parallel diode, low switching losses, very low collector-emitter saturation voltage, high current capability, and a robust TO-247-3 HCC through-hole package, it is suitable for motor drives, solar inverters, UPS systems, switched-mode power supplies, DC/DC converters, welding equipment, induction heating, industrial power stages, and high-efficiency energy conversion systems. The IKWH75N65EH7 delivers reliable Infineon IGBT performance for demanding high-voltage and high-current power electronics designs. | ||
| TOSHIBA | Available | Check Price | Get a Quote | TPH2R608NH,L1Q(M) is a 75V N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. Featuring Toshiba U-MOSVIII-H technology, very low 2.6mΩ-class RDS(on), high 150A to 168A current capability, 142W power dissipation, high-speed switching, small gate charge, and compact 8-pin SOP Advance surface-mount package, it is suitable for high-efficiency DC/DC converters, switching voltage regulators, synchronous rectification, server and telecom power supplies, industrial power modules, communication equipment, data-center power systems, and low-voltage load switching applications. The TPH2R608NH,L1Q(M) delivers low-loss Toshiba MOSFET performance for compact, high-current, and efficient power switching designs. | ||
| STMicroelectronics | Available | Check Price | Get a Quote | BTB16-600BWRG is a 600V 16A Snubberless™ Triac manufactured by STMicroelectronics. Featuring high commutation capability, medium-current AC switching performance, low thermal resistance clip bonding, 50mA gate trigger current class, and a robust TO-220AB through-hole package, it is suitable for general-purpose mains AC switching, static relays, heating regulation, induction motor starting circuits, appliance motor speed control, light dimmers, solenoid control, industrial automation, and AC load control boards. The BTB16-600BWRG provides reliable STMicroelectronics Triac performance for medium-power AC switching and phase-control applications. | ||
| NXP | - | Check Price | Get a Quote | TRANSISTOR 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal | ||
| STMicroelectronics | Available | Check Price | Get a Quote | STPS30150CT is a 150V 30A dual common-cathode Schottky rectifier manufactured by STMicroelectronics. Featuring a 2 × 15A center-tap diode configuration, low forward voltage drop, low leakage current, high junction temperature capability, avalanche capability, and a robust TO-220AB through-hole package, it is suitable for switched-mode power supplies, DC/DC converters, output rectification, freewheeling circuits, industrial power systems, telecom equipment, battery chargers, and power distribution boards. The STPS30150CT delivers reliable STMicroelectronics Schottky rectifier performance for efficient, high-frequency, and medium-power conversion designs. | ||
| Infineon | Available | Check Price | Get a Quote | IKWH75N65EH7XKSA1 is a 650V, 75A TRENCHSTOP™ IGBT7 discrete device from Infineon Technologies, featuring a fast and soft recovery anti-parallel diode in a TO-247-3 HCC package. With low collector-emitter saturation voltage, low switching losses, high-speed switching behavior, and a maximum junction temperature of 175°C, it is well suited for industrial inverters, motor drives, welding equipment, PFC circuits, UPS systems, and high-efficiency power conversion applications. | ||
| Onsemi | Available | Check Price | Get a Quote | SD05T1G is an onsemi 5V unidirectional TVS / ESD protection diode in a compact SOD-323 package. It features 6.2V minimum breakdown voltage, 350W peak pulse power capability, 24A peak pulse current, low leakage, 300mW steady-state power rating, and a wide -55°C to +150°C junction temperature range. It is suitable for protecting low-voltage signal lines, I/O ports, embedded systems, consumer electronics, computers, printers, communication systems, medical equipment, industrial control boards, and other voltage-sensitive electronic circuits from ESD and transient overvoltage events. | ||
| Onsemi | Available | Check Price | Get a Quote | NSVR0320MW2T1G is an onsemi automotive-grade single Schottky barrier diode in a compact SOD-323-2 package. It features low forward voltage, 1A forward-current capability, 20V / 23V-class reverse-voltage rating, 5A surge-current capability, and a wide operating temperature range. It is suitable for automotive electronics, portable devices, battery-powered equipment, DC/DC converter circuits, reverse-polarity protection, power OR-ing, low-loss rectification, communication devices, industrial control boards, and embedded low-voltage power-path applications. | ||
| DIODES | Check Price | Get a Quote | BC857BSQ-7-F is a Diodes Incorporated automotive-grade dual PNP small-signal BJT transistor array in a compact SOT-363 package. It features a 45V collector-emitter voltage rating, 100mA collector current, 200mW power dissipation, 100MHz transition frequency, 220 minimum DC current gain, and RoHS-compliant green packaging. It is suitable for automotive electronics, small-signal switching, AF amplifier circuits, consumer electronics, industrial control boards, communication equipment, portable devices, and compact general-purpose transistor circuits. | |||
| NEXPERIA | Available | Check Price | Get a Quote | BAT74 is a Nexperia Schottky barrier double diode integrating two electrically isolated Schottky diodes in a compact SOT143B surface-mount package. It features low forward voltage, fast switching performance, 30V reverse voltage rating, 200mA current capability per diode, integrated guard-ring stress protection, and automotive qualification. It is suitable for high-speed switching, signal clamping, line termination, signal steering, automotive electronics, communication equipment, consumer electronics, industrial control boards, and compact low-voltage protection circuits. | ||
| Onsemi | Yes | Check Price | Get a Quote | BAV99L is an onsemi dual series switching diode in a compact SOT-23 package, designed for high-speed switching, signal steering, data line protection, ESD protection support, polarity reversal protection, and small-signal clamping applications. With 100V reverse voltage, 215mA forward current, low 1.5pF capacitance, and fast 6ns reverse recovery time, it is well suited for compact consumer, industrial, communication, and automotive electronic circuits. | ||
| MITSUBISHI | - | Check Price | Get a Quote | POWEREX CM400DU-24NFHIGBT MODULE, 1.2KV, 400A | ||
| Onsemi | Check Price | Get a Quote | 2.0 A Schottky Rectifier | |||
| NEXPERIA | Available | Check Price | Get a Quote | |||
| DIODES | Check Price | Get a Quote | DIODE ARRAY GP 75V 300MA SOT23-3.Diode Array 1 Pair Series Connection 75 V 300mA (DC) Surface Mount TO-236-3, SC-59, SOT-23-3 | |||
| Unknown | Check Price | Get a Quote | 1A 4ns 100V 1.25V@150mA 200mA SOT-23 Single Diodes RoHS | |||
| Onsemi | Check Price | Get a Quote | 100 V Switching Diode, dual, series | |||
| Unknown | Check Price | Get a Quote | 2A 6ns 70V 1.25V@150mA 200mA SOT-23 Single Diodes RoHS | |||
| Rectron | Check Price | Get a Quote | Small Signal Switching Diodes SOT23,215mA,75V,Dual,Switching | |||
| Infineon | Check Price | Get a Quote | MOSFET (Metal Oxide) N-Channel Tube 5.9m ? @ 103A, 10V ±30V 10470pF @ 50V 227nC @ 10V TO-247-3 | |||
| Onsemi | Yes | Check Price | Get a Quote | Schottky Barrier Diode | ||
| Vishay | Check Price | Get a Quote | MOSFET P-CH 200V 11A TO220AB.P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-220AB | |||
| NEXPERIA | Yes | Check Price | Get a Quote | 60 V, 5.7 A PNP low VCEsat transistor PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NZ | ||
| TOSHIBA | Check Price | Get a Quote | 8 SOIC-18-300mil Darlington Transistor Arrays ROHS | |||
| Texas Instruments | - | Check Price | Get a Quote | |||
| TECH PUBLIC | - | Check Price | Get a Quote | 100V Independent 1V@250mA 150mA SOD-323 Schottky Diodes ROHS | ||
| STMicroelectronics | - | Check Price | Get a Quote | |||
| Good-Ark | - | Check Price | Get a Quote | DIODE STANDARD 75V 250MA SOD523.Diode 75 V 250mA Surface Mount SOD-523 | ||
| Vishay | - | Check Price | Get a Quote | MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 120mOhm @ 2.8A, 4.5V ±8V 425pF @ 10V 8nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3 |