RF Transistors

The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.

The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.

0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package

The UTV 080 is a COMMON EMITTER transistor capable of providing 8 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz.

The UTV 005 is a COMMON EMITTER transistor capable of providing 0.5 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz.

The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise.

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV for ECM applications.

PXFC211507SC is a thermally-enhanced high power RF LDMOS FET with 150 W output power at 28 V, operating from 2110 to 2170 MHz.

Two-carrier WCDMA Drive-up RF power amplifier module

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.

RF power transistors and ICs for cellular infrastructure, general purpose, and broadcast applications, covering frequencies from 400 MHz to 2700 MHz.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

120-watt LDMOS FET for multi-standard cellular power amplifier applications in the 1800 to 2200 MHz frequency band.

The PXAC201202FC is a 120-watt LDMOS FET for use in multi-standard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs.

The PXAC192908FV is a 240-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs

Infineon's RF power product selection guide for LDMOS & GaN-SiC transistors and ICs, covering frequencies from 400 MHz to 2700 MHz for cellular infrastructure and other applications.

Thermally-Enhanced High Power RF LDMOS FETs for 1200-1400 MHz power amplifier applications.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

Thermally-Enhanced High Power RF LDMOS FETs for 470-806 MHz band, 250 W, 50 V.

RF power transistors and ICs including LDMOS and GaN-SiC technologies for cellular infrastructure, general purpose, and broadcast applications.

32-bit ARM Cortex-M4 microcontroller with FPU

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

Harmonization of carrier tape for 248-type earless open cavity packages

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

Thermally-Enhanced High Power RF LDMOS FET integrating two independent 10-watt LDMOS FETs for cellular amplifier applications in the 2110 to 2170 MHz frequency band.

The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band.

Thermally-Enhanced High Power RF LDMOS FET, 320 W, 28 V, 2110 – 2170 MHz. The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Thermally-enhanced 150-watt LDMOS FETs for cellular power amplifier applications in the 2110-2170 MHz band.

The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.

The PTFB193408SV is a 340-watt symmetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.

The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

STPA5000 RF power amplifier for WCDMA 3GPP applications.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs.

RF power product selection guide for LDMOS & GaN-SiC transistors and ICs