Alliance Memory

32K x 8 static RAM with access times of 70ns and 100ns.

32K x 8 static CMOS RAM

32K x 8 static CMOS RAM with access times of 70ns and 100ns

32K x 8 static CMOS RAM with access times of 70ns and 100ns.

32K x 8 static CMOS RAM with access times of 70ns and 100ns.

32K x 8 static CMOS RAM with access times of 70ns and 100ns

Micron Parallel NOR Flash Embedded Memory (P30-65nm) with 256Mb and 512Mb densities.

Micron Parallel NOR Flash Embedded Memory (P33-65nm)

Numonyx P33-65nm Single Bit per Cell (SBC) Flash Memory with 64-Mbit and 128-Mbit densities.

The Micron Parallel NOR Flash memory is the latest generation of Flash memory devices.

Micron Parallel NOR Flash Embedded Memory (P33-65nm) with densities of 256Mb and 512Mb.

The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology.

64Mb, 3V, Multiple I/O Serial Flash Memory

The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology.

Legacy Fab-13 NOR Flash

Alliance Memory is a supplier of legacy memory products

128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface.

512Mb SDRAM with 536,870,912 bits, internally configured as a quad-bank DRAM with synchronous interface.

512Mb SDRAM with 536,870,912 bits, internally configured as a quad-bank DRAM with synchronous interface.

128Mb x32 SDRAM with PC100 compliance, fully synchronous operation, internal pipelined operation, and programmable burst lengths.

The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.

512Mb SDRAM with x4, x8, x16 configurations, quad-bank, synchronous interface, and pipelined operation.

The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface.

512Mb SDRAM, high-speed CMOS, dynamic random-access memory, 536,870,912 bits, quad-bank DRAM, synchronous interface.

512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits, internally configured as a quad-bank DRAM with a synchronous interface.

The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits.

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

256Mb SDRAM with x4, x8, x16 configurations, high-speed CMOS, dynamic random-access memory with synchronous interface and quad-bank DRAM.

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface.

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits, internally configured as a quad-bank DRAM with a synchronous interface.

512Mb DDR SDRAM with x4, x8, x16 configurations, featuring double data rate architecture for high-speed operation.

Legacy Fab-13 NOR Flash memory devices supplied by Alliance Memory.

2Gb DDR3 SDRAM with x4, x8, x16 configurations.

16Mb (2Mb x 8) SPI Flash memory with 75 MHz clock frequency, 2.7-3.6V supply, page-erasable with byte alterability.

64Mb (8Mb x8 or 4Mb x16) nonvolatile memory that can be read, erased, and reprogrammed.

Micron Parallel NOR Flash Embedded Memory with Top/Bottom Boot Block and 5V Supply.

Micron Parallel NOR Flash Embedded Memory with Top/Bottom Boot Block 5V Supply.

M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device

Micron Parallel NOR Flash Embedded Memory with Top/Bottom Boot Block 5V Supply.

Micron Parallel NOR Flash Embedded Memory with Top/Bottom Boot Block and 5V Supply.

Micron Parallel NOR Flash Memory with Top/Bottom Boot Block, 5V supply, supporting READ, ERASE, and PROGRAM operations.

M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device, also applicable to lower densities.

M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device with READ, ERASE, and PROGRAM operations using a single low-voltage (4.5–5.5V) supply.

The M25P80 is an 8Mb (1Mb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus.

The M25P16 is an 16Mb (2Mb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus.

The M25P10A is a 1Mb (125Kb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high-speed SPI-compatible bus.

256-Kbit (32 K × 8) high-performance CMOS static RAM

128K x 36 and 256K x 18 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect.