CEL

SiGe low noise amplifier for GPS and mobile communications.

NEC's UPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications.

3V, SUPER MINIMOLD UPC2771TB MEDIUM POWER SI MMIC AMPLIFIER

RF semiconductor products including RF switch ICs, GaAs FETs, silicon MOSFETs, bipolar transistors, and RFICs.

NEC's UPC2757TB and UPC2758TB are silicon RFICs manufactured using the NESAT™III process, consisting of a mixer, an IF amplifier and an LO buffer amplifier, suitable as 1st IF downconverters for cellular and other wireless systems.

NEC's UPC2757TB and UPC2758TB are silicon RFICs manufactured using the NESAT™III process.

Silicon MMIC Wideband Amplifiers UPC2745TB and UPC2746TB for mobile communication applications.

CEL (California Eastern Laboratories) is an engineering, sales and marketing company focused on RF Semiconductors, Optical Semiconductors and Wireless Connectivity Solutions.

The µPB1009K is a silicon monolithic IC developed for GPS receivers. This IC integrates a full VCO, second IF filter, 4-bit ADC, and digital control interface to reduce cost and mounting space.

UPA810T is a dual NPN high frequency silicon transistor in a small SMT package.

The PS9552, PS9552L1, PS9552L2 and PS9552L3 are optically coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.

2-channel optical coupled MOS FET solid state relay with GaAs LEDs and MOS FETs, suitable for analog signal control.

2-channel optical coupled MOS FET solid state relay with GaAs LEDs and MOS FETs, suitable for analog signal control.

The PS7113-1A, -2A and PS7113L-1A, -2A are solid state relays containing GaAs LEDs on the light emitting side (input side) and MOS FETs on the output side. They are suitable for analog signal control because of their low offset and high linearity.

The PS2913-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications.

The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications.

The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications.

The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP (Small Outline Package) for high density applications.

The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. Due to the high isolation voltage between the input and output, the PS2861B-1 is suitable for interface and signal transfer circuits that require surface or high-density mounting.

Optically coupled isolators containing a GaAs LED and NPN phototransistor in SSOP package for high density applications.

The PS2811-1 and PS2811-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications.

The PS2811-1 and PS2811-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications.

The PS2805-1 and PS2805-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SSOP for high density applications.

The PS2805-1 and PS2805-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SSOP for high density applications.

The PS2802-1 and PS2802-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected photo transistor in a plastic SSOP for high density applications.

The PS2801A-1 and PS2801A-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.

The PS2761B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2705A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor to realize an excellent cost performance.

PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2703-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This is mounted in a plastic SOP (Small Outline Package) for high density applications.

The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor.

NEC's PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor.

NEC's PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor.

NEC's PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor.

The PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.

The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters.

The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters.

The PS2581AL1, PS2581AL2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package) to realize an excellent cost performance. Creepage distance and clearance of leads are over 8 millimeters.

The PS2565-1 is optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.

The PS2565-1 is optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.

The PS2562-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor.

The PS2561-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount.

The PS2561-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.