Memory IC Development Tools

8192 x 8 bit static CMOS RAM

8192 x 8 bit static CMOS RAM with low power consumption and three-state outputs.

8192 x 8 bit static CMOS RAM. The U6264B is a static RAM with 8K x 8 memory organization.

Micron Parallel NOR Flash Embedded Memory (P30-65nm) with 256Mb and 512Mb densities.

Micron Parallel NOR Flash memory with 512Mb, 1Gb, and 2Gb densities, using 65nm process technology.

The device is an asynchronous, uniform block, parallel NOR Flash memory device.

Numonyx Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) with 32, 64, and 128 Mbit densities, providing improved mainstream performance with enhanced security features.

The device is an asynchronous, uniform block, parallel NOR Flash memory device.

3V Embedded Parallel NOR Flash memory device with asynchronous, uniform block architecture.

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash

Micron Parallel NOR Flash memory with 512Mb, 1Gb, and 2Gb densities, using 65nm process technology.

Micron Parallel NOR Flash memory with 512Mb, 1Gb, and 2Gb densities, using 65nm process technology.

128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories

The NAND flash 528 byte/ 264 word page is a family of non-volatile flash memories that uses the single level cell (SLC) NAND cell technology, referred to as the SLC small page family. The devices are either 128 Mbits or 256 Mbits and operate with a 3 V voltage supply.

128Mb, 3V, Multiple I/O Serial Flash Memory

The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology.

64Mb, 3V, Multiple I/O Serial Flash Memory

The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface.

The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology.

64Mb, 3V, Multiple I/O Serial Flash Memory

64Mb, 1.8V, Multiple I/O Serial Flash Memory

64Mb, 1.8V, Multiple I/O Serial Flash Memory

32Mb, 3V, Multiple I/O Serial Flash Memory

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, which is compliant with the MMC system specification.

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, which is compliant with the MMC system specification.

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, which is compliant with the MMC system specification.

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, which is compliant with the MMC system specification.

e.MMC (Automotive) memory device with densities from 8GB to 128GB, compliant with JEDEC/MMC standard 5.1.

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, which is compliant with the MMC system specification.

Micron e·MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 11-signal bus, which is compliant with the MMC system specification.

Micron e·MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 11-signal bus, compliant with the MMC system specification.

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, which is compliant with the MMC system specification.

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, which is compliant with the MMC system specification.

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, compliant with the MMC system specification.

Micron e.MMC is a communication and mass data storage device that includes a MultiMediaCard (MMC) interface, a NAND Flash component, and a controller on an advanced 12-signal bus, compliant with the MMC system specification.

The Micron reduced latency DRAM (RLDRAM) 2 is a high-speed memory device designed for high bandwidth data storage—telecommunications, networking, and cache applications. The chip’s 8-bank architecture is optimized for sustainable high speed operation.

128Mb: x16, x32 Mobile SDRAM

128Mb Mobile SDRAM with x16 and x32 configurations, featuring synchronous interface and quad-bank DRAM architecture.

256Mb x32 Mobile SDRAM with synchronous interface and quad-bank configuration.

The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface.

The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

256Mb high-speed CMOS dynamic random-access memory with synchronous interface, internally configured as quad-bank DRAM.

The Micron® 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

The Micron® 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

The Micron® 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface.

512Mb Mobile LPSDR SDRAM with 32M16 (32 Meg x 16) and 16M32 (16 Meg x 32) configurations, operating at 1.8V (1.7–1.95V) with programmable burst lengths and auto refresh capabilities.

512Mb DDR2 SDRAM with x4, x8, x16 configurations.

2Gb TwinDie DDR2 SDRAM with x4 and x8 configurations, using two 1Gb DDR2 dies in a single package.