Memory ICs

The NT5CB256M16DP-EK is a Nanya 4Gb DDR3(L) SDRAM memory IC designed for embedded systems, networking equipment, industrial controllers, consumer electronics, and processor-based applications. Featuring a 256M × 16-bit memory organization, 512MB capacity, DDR3/DDR3L voltage flexibility, multiple speed grades up to DDR3-2133, and a compact 78-ball VFBGA package, the Nanya NT5CB256M16DP-EK provides reliable high-density volatile memory for ARM processors, FPGAs, DSP platforms, multimedia systems, and industrial computing applications.

NT5CC64M16GP-DI is a Nanya Technology 1Gbit DDR3L SDRAM memory IC organized as 64M x 16. It supports up to 1600Mbps data rate, operates from a 1.35V DDR3L supply, and is supplied in a compact 96-ball BGA / VFBGA package. With an 800MHz clock rate, 16-bit data bus, 8-bank architecture, and commercial 0°C to +95°C temperature range, it is suitable for embedded systems, networking equipment, industrial control boards, IoT gateways, consumer electronics, video processing systems, and compact computing platforms requiring high-speed external system memory.

NT5AD256M16D4-HR is a Nanya Technology 4Gbit DDR4 SDRAM memory IC organized as 256M x 16. It supports up to 2666Mbps data rate, operates from a 1.2V DDR4 supply, and is supplied in a compact 96-ball BGA / TFBGA package. With features such as auto self-refresh, built-in temperature sensor, write leveling, dynamic on-chip termination, ZQ calibration, and CRC support, it is suitable for embedded systems, networking equipment, consumer electronics, industrial control boards, IoT gateways, video processing systems, and other applications requiring high-speed external system memory.

NT5AD512M16C4-JR is an 8Gb DDR4 SDRAM memory chip manufactured by Nanya Technology. Featuring a 512M × 16 organization, 3200Mbps DDR4-3200 data rate, 1.2V low-power operation, and compact 96-ball BGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, memory modules, and smart devices. The NT5AD512M16C4-JR delivers reliable high-speed Nanya DDR4 memory performance for compact, efficient, and cost-effective electronic designs.

NT5AD256M16E4-JR is a 4Gb DDR4 SDRAM memory chip manufactured by Nanya Technology. Featuring a 256M × 16 organization, 3200Mbps DDR4-3200 data rate, 1.2V low-power operation, and compact 96-ball BGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, memory modules, and smart devices. The NT5AD256M16E4-JR delivers reliable high-speed Nanya DDR4 memory performance for compact, efficient, and cost-effective electronic designs.

NT5CC128M16IP-DI is a 2Gb DDR3L SDRAM memory IC from Nanya Technology, organized as 128M × 16 and supplied in a 96-ball BGA package. It supports DDR3L-1600 performance, low-voltage operation, and industrial temperature use, making it suitable for embedded systems, industrial controllers, networking equipment, consumer electronics, and high-speed data-buffering applications.

DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96

DDR DRAM,

DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96

Mobile LPDDR3 16Gb 512Mx32 1.2V

Memory (ICs) ROHS

DDR SDRAM ROHS

Memory (ICs) ROHS

Memory (ICs) ROHS

Memory (ICs) ROHS

FBGA-96 Memory (ICs) ROHS

TFBGA-96 Memory (ICs) ROHS

DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96

DDR DRAM, 128MX32, CMOS, PBGA134, FBGA-134

DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84

Description: DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, BGA-84

DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, BGA-84

Description: DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, BGA-84

DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, BGA-84

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, VFBGA-84

Description: DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, VFBGA-84

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, VFBGA-84

DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, BGA-84

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, BGA-84

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, BGA-84

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT,BGA-84

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT,BGA-84

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-60

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-60

DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96, VFBGA-96