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Product	Manufacturer	In Stock Status	Price	RFQ	Description
MB85RS64VPNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	MB85RS64V is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS512TPNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS2MTPH-G-JNE1	RAMXEED	-	Check Price	Get a Quote	MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS2MTPF-G-JNERE2	RAMXEED	-	Check Price	Get a Quote	MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip with 262,144 words × 8 bits configuration.
MB85RS2MTAPNF-G-BDERE1	RAMXEED	-	Check Price	Get a Quote	MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip with 262,144 words × 8 bits configuration.
MB85RS2MTAPH-G-JNE2	RAMXEED	-	Check Price	Get a Quote	MB85RS2MTA is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS256TYPNF-G-BCERE1	RAMXEED	-	Check Price	Get a Quote	MB85RS256TY is a FeRAM (Ferroelectric Random Access Memory) chip with 32,768 words × 8 bits configuration, using ferroelectric and CMOS processes for nonvolatile memory cells, targeted for high-temperature environments like automotive applications.
MB85RS1MTPW-G-APEWE1	RAMXEED	-	Check Price	Get a Quote	MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS1MTPNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	MB85RS1MT is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RS16PNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	MB85RS16 is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RC64VPNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC64V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits.
MB85RC64TAPNF-G-BDERE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits.
MB85RC64TAPN-G-AMEWE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC64TA is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RC64PNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	Fujitsu FRAM 64kbit I2C series with improved design and smaller SON8 package.
MB85RC256VPNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RC256VPF-G-JNERE2	RAMXEED	-	Check Price	Get a Quote	The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RC16PNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RC16PNF-G-JNE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC16 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RC16PN-G-AMERE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RC128APNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC128A is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85RC04VPNF-G-JNERE1	RAMXEED	-	Check Price	Get a Quote	The MB85RC04V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85R256FPNF-G-JNERE2	RAMXEED	-	Check Price	Get a Quote	The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
MB85R256FPNF-G-JNE2	RAMXEED	-	Check Price	Get a Quote	The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

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