Memory IC Development Tools

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM.

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory.

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory.

The Xicor X24C44 is a serial 256 bit NOVRAM featuring a static RAM configured 16 x 16, overlaid bit-by-bit with a nonvolatile EEPROM array.

Serial 256-bit NOVRAM with static RAM and nonvolatile EEPROM array, 16x16 organization, single 5V supply.

The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (EEPROM).

The Mavriq™ RM25C64C-L is a 64 Kbit serial EEPROM memory device that utilizes Adesto's CBRAM® resistive technology.

32/64/128-Kbit 2.7V Minimum Sterilization-Tolerant Boot Memory I2C Bus

The RM24EP I2C EEPROM-compatible family of gamma-tolerant boot memory is comprised of devices with densities of 32 Kbit, 64 Kbit and 128 Kbit utilizing Adesto's CBRAM resistive memory technology.

64-Kbit 1.65V Minimum Non-volatile Fast Write Serial EEPROM with I2C Bus.

128-Kbit 1.65V minimum non-volatile fast write serial EEPROM with I2C bus interface.

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

The R1RP0416DI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit.

The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

R1EV24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process.

IDT71V67703 and IDT71V67903 are 3.3V synchronous SRAMs with 256Kx36/512Kx18 configurations, featuring flow-through outputs, single cycle deselect, and burst counter.

IDT71V67703/7903 are high-speed 3.3V synchronous SRAMs organized as 256K x 36/512K x 18 with flow-through outputs and single cycle deselect.

IDT71V67703 and IDT71V67903 are 3.3V synchronous SRAMs with 3.3V I/O, burst counter, flow-through outputs, and single cycle deselect.

256K x 36 and 512K x 18 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, and Single Cycle Deselect.

3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, and Single Cycle Deselect, available in 256Kx36 and 512Kx18 configurations.

3.3V Synchronous SRAMs with 256Kx36/512Kx18 organization, burst counter, flow-through outputs, and single cycle deselect.

High-speed 3.3V synchronous SRAMs with 256K x 36 and 512K x 18 organizations, flow-through outputs, and single cycle deselect.

256Kx36/512Kx18 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, Single Cycle Deselect

IDT71V67703/7903 are high-speed 3.3V synchronous SRAMs organized as 256K x 36/512K x 18 with flow-through outputs and single cycle deselect.

IDT71V67603/Z and IDT71V67803/Z are 3.3V Synchronous SRAMs with 3.3V I/O, Pipelined Outputs, Single Cycle Deselect.

IDT71V67603/Z and IDT71V67803/Z are 3.3V Synchronous SRAMs with 3.3V I/O, Pipelined Outputs, and Single Cycle Deselect.

3.3V Synchronous SRAMs with 3.3V I/O, Pipelined Outputs, Single Cycle Deselect

3.3V Synchronous SRAMs with 256K x 36/512K x 18 memory configurations, pipelined outputs, and single cycle deselect.

IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with 3.3V I/O, Pipelined Outputs, Single Cycle Deselect

IDT71V67603 and IDT71V67803 are 3.3V synchronous SRAMs with 256Kx36/512Kx18 memory configurations, featuring pipelined outputs and single cycle deselect.

3.3V Synchronous SRAMs with 2.5V I/O, Pipelined Outputs, and Single Cycle Deselect. Memory configurations: 256K x 36 and 512K x 18.

The IDT71V67602/7802 are high-speed SRAMs organized as 256K x 36/512K x 18.

The IDT71V67602 and IDT71V67802 are high-speed synchronous SRAMs organized as 256K x 36 and 512K x 18, featuring 3.3V core power supply, 2.5V I/O, pipelined outputs, and single cycle deselect.

The IDT71V67602 and IDT71V67802 are 3.3V synchronous SRAMs with 2.5V I/O, featuring burst counter, pipelined outputs, and single cycle deselect.

High-speed SRAMs organized as 256K x 36 or 512K x 18, with 3.3V core and 2.5V I/O, pipelined outputs, and single cycle deselect.

The IDT71V67602/7802 are high-speed SRAMs organized as 256K x 36/512K x 18.

High-speed synchronous SRAMs with 256Kx36/512Kx18 organization, 3.3V core, 2.5V I/O, pipelined outputs, and burst counter.

The IDT71V67602/7802 are high-speed 3.3V synchronous SRAMs with 2.5V I/O, organized as 256K x 36 or 512K x 18, featuring burst counter, pipelined outputs, and single cycle deselect.

High-speed 3.3V synchronous SRAMs with 256K x 36 or 512K x 18 organization, featuring burst mode and flow-through outputs.

The IDT71V67703/7903 are high-speed SRAMs organized as 256K x 36/512K x 18. The IDT71V67703/7903 SRAMs contain write, data, address and control registers.

The IDT71V67703/7903 are high-speed SRAMs organized as 256K x 36/512K x 18.

The IDT71V67703/7903 are high-speed SRAMs organized as 256K x 36/512K x 18.

256K x 36 and 512K x 18 3.3V Synchronous SRAMs with 3.3V I/O, Flow-Through Outputs, and Single Cycle Deselect.

High-speed SRAMs organized as 256K x 36 or 512K x 18, with 3.3V core and I/O supply, flow-through outputs, and single cycle deselect.

High-speed 3.3V synchronous SRAMs with 256K x 36 or 512K x 18 organization, featuring flow-through outputs and single cycle deselect.

High-speed 3.3V synchronous SRAMs with 256Kx36/512Kx18 organization, 3.3V I/O, flow-through outputs, and single cycle deselect.

High-speed SRAMs organized as 256K x 36 or 512K x 18, with 3.3V core and I/O supply, flow-through outputs, and single cycle deselect.

Explanation of IDT suffix meanings

IDT71V67603/7803 are 3.3V high-speed synchronous SRAMs with 256K x 36/512K x 18 configurations, pipelined outputs, and single cycle deselect.