DRAM

K4A8G085WC-BCTD is an 8Gbit DDR4 SDRAM memory IC from Samsung, organized as 1G × 8 and supplied in a 78-ball FBGA package. With DDR4-2666 class performance and 1.2V operation, it is suitable for PC memory modules, laptops, industrial computers, networking equipment, servers, embedded systems, and other high-speed memory applications.

K4FBE3D4HB-KHCL02V is a Samsung 32Gbit LPDDR4 Mobile DRAM device organized as 1G x 32 and supplied in a compact 200-ball FBGA package. Supporting up to 4266Mbps data rate and low-power LPDDR4 operation, it is suitable for mobile devices, embedded computing platforms, automotive infotainment, industrial edge systems, AIoT devices, networking equipment, video processing systems, and high-performance SoC-based designs requiring high-bandwidth external memory.

K4F6E3S4HM-MGCJ is a Samsung 16Gbit / 2GB LPDDR4 Mobile DRAM device organized as 512M x 32 and supplied in a compact 200-ball FBGA / TFBGA package. It operates as a low-power LPDDR4 memory solution with 3733Mbps-class performance, 1.1V low-voltage operation, and a commonly listed -25°C to +85°C temperature range. It is suitable for mobile devices, embedded computing platforms, single-board computers, consumer electronics, IoT gateways, networking equipment, video processing systems, and SoC-based products requiring high-bandwidth external system memory.

KHBB84A03B-MC1J is a 24GB HBM3E High Bandwidth Memory device manufactured by Samsung. Featuring a wide HBM interface, advanced stacked DRAM architecture, and high-speed HBM3E performance, it is designed for AI accelerators, data center GPUs, high-performance computing systems, machine learning servers, advanced compute ASICs, and cloud acceleration platforms. The KHBB84A03B-MC1J delivers high memory bandwidth, compact integration, and reliable Samsung HBM technology for next-generation AI and data center hardware.

KHBBC4B03C-MC1K is a 36GB HBM3E High Bandwidth Memory device manufactured by Samsung. Featuring 9.2Gbps speed, high-capacity stacked DRAM architecture, and an advanced HBM interface, it is designed for AI accelerators, data center GPUs, high-performance computing systems, machine learning servers, and advanced compute ASICs. The KHBBC4B03C-MC1K delivers extreme bandwidth, compact integration, and reliable Samsung HBM3E memory performance for next-generation AI and data center platforms.

K4AAG165WA-BCWE is a 16Gb DDR4 SDRAM memory chip manufactured by Samsung. Featuring a 1G × 16 organization, DDR4-3200 / 3200Mbps speed grade, 1.2V low-power operation, and compact 96-ball FBGA package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, servers, storage systems, and high-performance consumer electronics. The K4AAG165WA-BCWE delivers high-density Samsung DDR4 memory performance for compact, reliable, and bandwidth-demanding electronic designs.

K4B2G1646F-BYMA is a 2Gb DDR3L SDRAM memory chip manufactured by Samsung. Featuring a 128M × 16 organization, DDR3L-1866 performance class, 1.35V low-power operation, and compact FBGA-96 package, it is suitable for embedded computing platforms, industrial control systems, networking equipment, consumer electronics, medical devices, and instrumentation products. The K4B2G1646F-BYMA provides reliable Samsung DDR3L memory performance for compact, low-power, and long-life electronic designs.

K4U6E3S4AA-MGCL is a 16Gb LPDDR4X SDRAM memory chip manufactured by Samsung. Featuring x32 organization, 4266Mbps data rate, low-power LPDDR4X architecture, and a compact 200-ball FBGA package, it is suitable for smartphones, tablets, embedded computing platforms, AI edge devices, smart home products, IoT gateways, and consumer electronics. The K4U6E3S4AA-MGCL delivers high bandwidth, efficient power consumption, and reliable Samsung mobile DRAM performance for compact modern electronic systems.

K4B2G1646F-BCNB is a 2Gb DDR3 SDRAM memory chip manufactured by Samsung. Featuring a 128M × 16 organization, DDR3-2133 performance, 1.5V operating voltage, and a compact 96-ball FBGA package, it is widely used in embedded computing platforms, industrial automation systems, networking equipment, medical devices, and consumer electronics. The K4B2G1646F-BCNB delivers reliable high-speed DDR3 memory performance, low system complexity, and excellent compatibility for a wide range of embedded and industrial applications.

K4F6E3S4HM-THCL is a 16Gb LPDDR4 SDRAM memory device manufactured by Samsung. Featuring a 512M × 32 organization, up to 4266 Mbps performance, low-power LPDDR4 architecture, and a compact 200-ball FBGA package, it is designed for automotive electronics, AI edge devices, industrial embedded systems, networking equipment, smart cameras, and advanced mobile platforms. The K4F6E3S4HM-THCL delivers high bandwidth, low power consumption, and reliable operation for next-generation embedded and intelligent computing applications.

K4A4G085WF-BCTD is a 4Gb DDR4 SDRAM memory chip manufactured by Samsung. Featuring a 512M × 8 organization, 2666Mbps data rate, 1.2V low-power operation, and compact 78-ball FBGA package, it is suitable for DDR4 memory modules, desktop computers, laptops, embedded systems, networking equipment, industrial control devices, and consumer electronics. The K4A4G085WF-BCTD delivers reliable Samsung DDR4 performance for compact and cost-effective memory designs.

K3LK7K70BM-BGCP is a 64Gb LPDDR5 SDRAM memory device manufactured by Samsung. Featuring LPDDR5-6400 performance, x64 organization, and a compact FBGA-496 package, it delivers high bandwidth and low-power operation for smartphones, tablets, AI edge devices, automotive electronics, embedded computing systems, and multimedia platforms. The K3LK7K70BM-BGCP is suitable for modern high-performance designs that require fast data processing, compact integration, and reliable Samsung LPDDR5 memory technology.

K4AAG085WA-BIWE is a 16Gb DDR4 SDRAM memory chip manufactured by Samsung. Featuring a 2G × 8 organization, 1.2V low-power operation, and compact FBGA-78 package, it is suitable for DDR4 memory modules, servers, desktop computers, laptops, networking equipment, industrial computers, and embedded systems. The K4AAG085WA-BIWE provides high-density DRAM performance, efficient power consumption, and reliable Samsung memory technology for modern computing platforms.

K4FBE3D4HM-THCL is a 32Gb LPDDR4 SDRAM memory device manufactured by Samsung. Featuring a 2-channel x16 architecture, 4266Mbps data rate, 200-ball FBGA package, and -40°C to +105°C extended temperature operation, it is designed for automotive infotainment systems, ADAS modules, embedded computing platforms, AI vision devices, industrial terminals, and smart mobile electronics. The K4FBE3D4HM-THCL delivers high memory bandwidth, low power consumption, compact integration, and reliable performance for modern automotive and embedded applications.

W25Q16JVSSIQ is a Winbond 16Mbit / 2MB Serial NOR Flash memory from the W25Q16JV SpiFlash® family. It supports Standard SPI, Dual SPI, and Quad SPI interfaces with up to 133MHz clock frequency, operates from 2.7V to 3.6V, and comes in an 8-pin SOIC package. It is well suited for MCU firmware storage, BIOS and boot code, embedded systems, IoT modules, networking devices, industrial control boards, consumer electronics, and configuration memory applications.

The K4ZAF325BC-SC20 is a high-performance GDDR6 Graphics Memory (VRAM) chip manufactured by Samsung. This specific component has gained significant attention in the hardware community because it is used in the Sony PlayStation 5 Pro (PS5 Pro) and certain high-end graphics cards (such as the Gigabyte GeForce RTX 4060 Ti AERO OC 16GB).

Next-level speed for next-gen mobile

High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy. DDR4 8Gb x 8 1.2V 1.333GHz 0°C~85°C FBGA-78

DDR5 ushers indata-centric innovation

DDR5 ushers indata-centric innovation

Versatile LPDRAM for mobile solutions

Broaden the horizons of your mobile devices

Next-level speed for next-gen mobile

Versatile LPDRAM for mobile solutions

Exceptional speed, high reliability, low energy consumption

Exceptional speed, high reliability, low energy consumption

FBGA-180 Memory (ICs) ROHS

Exceptional speed, high reliability, low energy consumption

Versatile LPDRAM for mobile solutions

Registered DIMM

Registered DIMM

Registered DIMM

Registered DIMM

Registered DIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM

Error correction code UDIMM / SODIMM