RFQ List
NVRAM (Non-Volatile Random Access Memory) is a class of memory ICs that retains stored data when power is removed while still supporting random-access read and write operations. It combines the persistence of non-volatile storage with the direct accessibility of RAM, enabling reliable data retention without continuous power.
NVRAM devices are commonly implemented using different non-volatile memory technologies and are offered as integrated circuits intended for digital systems that require preserved information across power cycles.
| Product | Manufacturer | In Stock Status | Price | Qty | RFQ | Description |
|---|---|---|---|---|---|---|
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4016 is a nonvolatile memory organized as 1,048,576 words by 8 bits. It uses extremely low standby current CMOS SRAMs, coupled with a small lithium coin cell to provide nonvolatility without the write-cycle limitations associated with an EEPROM. | ||
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4015/Y/LY is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. | ||
| Texas Instruments | - | Check Price | Get a Quote | 512 k × 8 nonvolatile SRAM (5 V, 3.3 V) with integral control circuitry and lithium energy source. | ||
| Texas Instruments | - | Check Price | Get a Quote | 256Kx8 Nonvolatile SRAM with automatic write-protection during power-up/power-down cycles and 10-year data retention. | ||
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility. | ||
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. | ||
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. | ||
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. | ||
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. It uses low standby current CMOS SRAMs with lithium coin cells for nonvolatility. | ||
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4010/Y/LY is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. | ||
| Texas Instruments | - | Check Price | Get a Quote | The CMOS bq4010/Y/LY is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. | ||
| Texas Instruments | - | Check Price | Get a Quote | The bq2022 is a 1K-bit serial EPROM with SDQ interface, featuring a factory-programmed unique 64-bit identification number and 8-bit CRC generation. | ||
| Texas Instruments | - | Check Price | Get a Quote | * Memory IC * Series | ||
| Texas Instruments | - | Check Price | Get a Quote | - Memory IC - Series |
