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    1. Home/
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    3. Wireless & RF Semiconductors/
    4. Wireless & RF Integrated Circuits/
    5. MSA-0870 Broadcom

    MSA-0870 [Broadcom]

    MSA-0870
    MSA-0870

    Part No:

    MSA-0870

    Category:

    Wireless & RF Integrated Circuits

    Manufacturer:

    Broadcom

    Description:

    The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency.

    Datasheet:

    Product FAQ

    1. Is MSA-0870 available for RFQ?

    Yes. MSA-0870 by Broadcom is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for MSA-0870?

    Pricing for MSA-0870 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of MSA-0870?

    MSA-0870 is a Broadcom Wireless & RF Integrated Circuits with Device Voltage Temp Coeff: -17.0mV/°C and Thermal Resistance Jc: 150°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for MSA-0870?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can MSA-0870 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to MSA-0870?

    Yes. If MSA-0870 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Broadcom Wireless & RF Integrated Circuits parts or compatible alternatives.

    RFQ

    Part Number:

    MSA-0870

    Manufacturer:

    Broadcom

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Supply Voltage
    7.0V ~ 8.4V
    Package
    Hermetic Gold-ceramic Microstrip Package (70 mil)
    Storage Temperature
    -65°C ~ 200°C
    Packing
    Bulk
    Device Current Max
    80mA
    Device Voltage Temp Coeff
    -17.0mV/°C
    Gain Max 1ghz
    26.5 dB
    Gain Min 1ghz
    23.5 dB
    Gain Typ 1ghz
    25.0 dB
    Group Delay Typ
    185 psec
    Input Vswr Max
    1.5:1
    Ip3 Typ
    27.0 dBm
    Junction Temperature
    200°C
    Noise Figure
    3.0 dB
    Operating Current
    20mA ~ 40mA
    Output Vswr Max
    1.9:1
    P1db Typ
    15.5 dBm
    Package Dimensions
    0.070 x 0.040 x 0.020 inches
    Power Dissipation
    750mW
    Rf Input Power
    +13 dBm
    Thermal Resistance Jc
    150°C/W

    Products Detail

    The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. Designed for use as a general purpose 50Ω gain block above 0.5 GHz and as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial and military applications. Features include usable gain to 6.0 GHz, high gain (32.5 dB typical at 0.1 GHz, 23.5 dB typical at 1.0 GHz), low noise figure (3.0 dB typical at 1.0 GHz), and hermetic gold-ceramic microstrip package. Fabricated using Avago’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process with nitride self-alignment, ion implantation, and gold metallization for excellent performance, uniformity, and reliability. External bias resistor enables temperature and current stability with bias flexibility.

    Key Features

    • Usable Gain to 6.0 GHz
    • High Gain: 32.5 dB Typical at 0.1 GHz, 23.5 dB Typical at 1.0 GHz
    • Low Noise Figure: 3.0 dB Typical at 1.0 GHz
    • Hermetic Gold-ceramic Microstrip Package
    • Process: 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC with nitride self-alignment, ion implantation, gold metallization
    • External bias resistor for temperature/current stability and bias flexibility

    Application scenarios

    • Industrial and military applications
    • narrow and moderate band IF and RF amplifiers

    Documents

    Datasheets:

    MSA-0870
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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