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    5. CGHV40180F-AMP1 MACOM

    CGHV40180F-AMP1 [MACOM]

    CGHV40180F-AMP1
    CGHV40180F-AMP1

    Part No:

    CGHV40180F-AMP1

    Category:

    Development Tools

    Manufacturer:

    MACOM

    Description:

    The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Product FAQ

    1. Is CGHV40180F-AMP1 available for RFQ?

    Yes. CGHV40180F-AMP1 by MACOM is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for CGHV40180F-AMP1?

    Pricing for CGHV40180F-AMP1 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of CGHV40180F-AMP1?

    CGHV40180F-AMP1 is a MACOM Development Tools with Thermal Resistance Junction To Case: 0.95°C/W and Drain Source Breakdown Voltage Min: 125V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for CGHV40180F-AMP1?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can CGHV40180F-AMP1 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to CGHV40180F-AMP1?

    Yes. If CGHV40180F-AMP1 is unavailable, obsolete, or does not meet your required lead time, we can help check similar MACOM Development Tools parts or compatible alternatives.

    RFQ

    Part Number:

    CGHV40180F-AMP1

    Manufacturer:

    MACOM

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product
    Package
    Flange Package (2-lead)
    Storage Temperature
    -65°C ~ +150°C
    Amp3 Drain Efficiency Typ
    >75%
    Amp3 Output Power Typ
    250W
    Amp3 Power Gain Typ
    >16 dBm
    Amp3 Small Signal Gain Typ
    >20 dB
    Amp3 Vswr
    3:1
    Case Operating Temperature Max
    +150°C
    Case Operating Temperature Min
    -40°C
    Drain Efficiency Min
    64%
    Drain Efficiency Typ
    74%
    Drain Source Breakdown Voltage Min
    125V
    Drain Source Voltage
    150V
    Feedback Capacitance Typ
    1.23pF
    Gate Quiescent Voltage Typ
    -2.7V
    Gate Source Voltage
    -10V ~ +2V
    Gate Threshold Voltage
    -3.8V ~ -2.3V
    Input Capacitance
    57.8pF
    Max Dissipated Power
    150W
    Max Drain Current
    12.1A
    Max Forward Gate Current
    42mA
    Operating Frequency
    2.0GHz
    Operating Junction Temperature
    225°C
    Operating Voltage
    50V
    Output Capacitance
    13.7pF
    Output Power
    53.7 dBm
    Output Power Typ
    54.3 dBm
    Package Type
    440223
    Power Gain Min
    19.3 dB
    Power Gain Typ
    20.3 dB
    Saturated Drain Current Min
    27.2A
    Saturated Drain Current Typ
    38.9A
    Screw Torque
    40 in-oz
    Small Signal Gain Min
    23.4 dB
    Small Signal Gain Typ
    24.0 dB
    Soldering Temperature
    245°C
    Thermal Resistance Junction To Case
    0.95°C/W

    Products Detail

    The CGHV40180F is an unmatched GaN HEMT designed for RF and microwave applications. Operating from a 50V rail, it provides broadband performance up to 2.0 GHz with high efficiency, high gain, and wide bandwidth capabilities. Key features include 24 dB small signal gain at 900 MHz, 20 dB power gain at 900 MHz, 250 W typical output power at 900 MHz, and 75% efficiency at P_sat. The transistor is housed in a 2-lead flange package and is ideal for linear and compressed amplifier circuits.

    Key Features

    • Up to 2.0 GHz Operation, 24 dB Small Signal Gain at 900 MHz, 20 dB Power Gain at 900 MHz, 250 W Typical Output Power at 900 MHz, 75% Efficiency at P_sat, High Efficiency, High Gain, Wide Bandwidth Capabilities

    Application scenarios

    • Military Communications
    • Public Safety VHF-UHF applications
    • Radar
    • Medical
    • Broadband Amplifiers
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method
    Related Information
    • Part Number
      Manufacturer
      Stock Status
      Pricing
      RoHS/Datasheet
    • CG2H30070F-TB2
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    • MAIA-011004-2SMB
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    • 21168-01
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    • MAMF-011133-001SMB
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    • MAMF-011069-1SMB
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    • 21122-02
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    • MAFC-004403-001SMB
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    • MSW2041-204-E
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      Available for RFQ
      Request Volume Pricing
    • 21170-01
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      Available for RFQ
      Request Volume Pricing
      -
    • CGHV40180F-AMP1
      MACOM
      Available for RFQ
      Request Volume Pricing
      -

    21122-02

    21122-02

    MACOM

    MSW2041-204-E

    MSW2041-204-E

    MACOM

    MAMF-011133-001SMB

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    21168-01

    21168-01

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    CGHV40180F-AMP1

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    MAMF-011069-1SMB

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    MAIA-011004-2SMB

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