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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. E3M0120090D WOLFSPEED

    E3M0120090D [WOLFSPEED]

    E3M0120090D
    E3M0120090D

    Part No:

    E3M0120090D

    Category:

    Transistors

    Manufacturer:

    WOLFSPEED

    Description:

    Silicon Carbide Power MOSFET with 900V blocking voltage and low on-resistance.

    RoHS Status:

    Product FAQ

    1. Is E3M0120090D available for RFQ?

    Yes. E3M0120090D by WOLFSPEED is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for E3M0120090D?

    Pricing for E3M0120090D can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of E3M0120090D?

    E3M0120090D is a WOLFSPEED Transistors with Continuous Drain Current: 23A and Operating Temperature: -55°C ~ +150°C. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for E3M0120090D?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can E3M0120090D be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to E3M0120090D?

    Yes. If E3M0120090D is unavailable, obsolete, or does not meet your required lead time, we can help check similar WOLFSPEED Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    E3M0120090D

    Manufacturer:

    WOLFSPEED

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Power Dissipation
    97W
    Continuous Drain Current
    23A
    Pulsed Drain Current
    50A
    Operating Temperature
    -55°C ~ +150°C
    Package
    TO-247-3
    RoHS Status
    RoHS Compliant
    On Resistance
    120mΩ

    Products Detail

    This is a 3rd generation Silicon Carbide (SiC) N-Channel Enhancement Mode Power MOSFET with 900V blocking voltage and low on-resistance (120 mΩ typical). It features high-speed switching with low capacitances, fast intrinsic diode with low reverse recovery, and is halogen-free and RoHS compliant. Automotive qualified (AEC-Q101) and PPAP capable. Benefits include higher system efficiency, reduced cooling requirements, increased power density, and increased system switching frequency.

    Key Features

    • 3rd generation SiC MOSFET technology
    • High blocking voltage with low On-resistance
    • High speed switching with low capacitances
    • Fast intrinsic diode with low reverse recovery (Qrr)
    • Halogen free, RoHS compliant
    • Automotive Qualified (AEC-Q101) and PPAP Capable

    Application scenarios

    • Automotive EV battery chargers
    • Renewable energy
    • High voltage DC/DC converters
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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