Part No:
BC857BT-7
Category:
Transistors
Description:
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
Package:
-
Production Status:
In Stock Status:
Specification
Transistor Element Material
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Products Detail
BC857BT-7 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857BT-7 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BT-7 Applications
There are a lot of Diodes Incorporated
BC857BT-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
Documents
PCN Design/Specification: