Part No:
BCX19TC
Category:
Transistors
Description:
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Package:
-
Datasheet:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Emitter Base Voltage (VEBO)
Continuous Collector Current
Products Detail
BCX19TC Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 620mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCX19TC Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BCX19TC Applications
There are a lot of Diodes Incorporated
BCX19TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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