Product Description:

The FMH11N90E is a high-performance N-channel enhancement mode metal-oxide semiconductor field-effect transistor (MOSFET) from Fuji Electric. This discrete semiconductor product is designed for switching applications, offering exceptional reliability and efficiency. The FMH11N90E is packaged in a flange mount, through-hole package with a rectangular shape, making it suitable for a wide range of applications.

Features:

• Low noise operation
• High power dissipation of 285W
• High drain-source on resistance of 1Ω
• High pulsed drain current of 44A
• High avalanche energy rating of 811.9mJ
• Operating temperature range of -55°C to 150°C
• Single with built-in diode configuration

Applications:

• Primary applications: Switching and power control in industrial automation, automotive, and telecommunications systems
• Secondary applications: Power supplies, motor control, and other high-power applications requiring low noise and high efficiency

Alternative Parts:

• Other N-channel MOSFETs from Fuji Electric, such as the FMH11N90E
• Similar products from other manufacturers, such as the IRF540 from International Rectifier

Embedded Modules:

• This component is not typically used as an embedded module, but rather as a discrete semiconductor device.

FAQs:

Q: What is the maximum operating temperature of the FMH11N90E? A: The maximum operating temperature is 150°C.

Q: What is the maximum power dissipation of the FMH11N90E? A: The maximum power dissipation is 285W.

Q: Is the FMH11N90E suitable for surface mount applications? A: No, the FMH11N90E is not suitable for surface mount applications and is designed for through-hole mounting only.

Q: What is the maximum drain current of the FMH11N90E? A: The maximum drain current is 11A.

Q: Is the FMH11N90E qualified for use in automotive applications? A: The qualification status of the FMH11N90E is not specified, and it is recommended to consult the manufacturer for specific application requirements.