2N7002DWH6327XT Overview

Its continuous drain current is 300 mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60 V, and this device has a drain-to-source breakdown voltage of 60 V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 5.5 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.6 Ω when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.To operate this transistor, you need to apply a 60 V drain to source voltage (Vdss).

2N7002DWH6327XT Features

a continuous drain current (ID) of 300 mA
a drain-to-source breakdown voltage of 60 V voltage
the turn-off delay time is 5.5 ns
single MOSFETs transistor is 1.6 Ω
a 60 V drain to source voltage (Vdss)

2N7002DWH6327XT Applications

There are a lot of Infineon
2N7002DWH6327XT applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters