IXFN23N100 [Littelfuse]

IXFN23N100 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.This device has a continuous drain current (ID) of [23A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 92A is the maximum peak drain current rated for this device.MOSFETs have 390mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFN23N100 Features

the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 92A.
single MOSFETs transistor is 390mOhm
a 1000V drain to source voltage (Vdss)

IXFN23N100 Applications

There are a lot of IXYS
IXFN23N100 applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit