The 0912GN-250V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, 250 Watts of pulsed RF output power at 128μs pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal pre-match for optimal performance. This transistor can be used for broadband avionics data link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.