
K4FBE3D4HM-GHCL
SAMSUNG

High-Performance SiC Gate Driver Cores are Dual-Channel Gate Driver Cores for 1200V SiC modules. These Gate Driver Cores feature Augmented Switching™ control, robust short circuit protection, and are fully software configurable, including +/- Vgs Gate Voltages. The new 2ASC-12A2HP Gate Driver Core adds two-level turn-on Augmented Switching options: 2ASC-12A2HP Data Sheet
1200V Modules:
Optimized for Electric Vehicles, Auxiliary Power Unit, Charging, Storage and Inverter applications, these Gate Driver Cores are UL compliant for up to 1200V rated modules (and below), can switch up to 150 kHz, and provide up to 7 unique fault and monitoring conditions, including Temperature and High Voltage Monitoring.
These Cores are production qualified to enable rapid time to market. They can also be mated to Module Adapter Boards for rapid evaluation of Module and Gate Driver.
Easily configure and fine-tune the performance of these Gate Drivers using the Intelligent Configuration Tool (ICT) Version 2.0
No key features available
No application scenarios available
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Looking for Pricing? Contact us for volume pricing.
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
IMPORTANT NOTICE
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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