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2N6790 - MICROSEMI | Electronic Components - ICAllIn

2N6790 [MICROSEMI]

Name: 2N6790
Brand: MICROSEMI
SKU: 2N6790
Availability: InStock

Part No:

2N6790

Transistors

Manufacturer:

MICROSEMI

Description:

The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

RoHS Status:

Product FAQ

1. Is 2N6790 available for RFQ?

Yes. 2N6790 by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for 2N6790?

Pricing for 2N6790 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of 2N6790?

2N6790 is a MICROSEMI Transistors with Zero Gate Voltage Drain Current 160V 125C Max: 1000µA and Zero Gate Voltage Drain Current 200V Max: 250µA. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for 2N6790?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can 2N6790 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to 2N6790?

Yes. If 2N6790 is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

Part Number:

2N6790

Manufacturer:

MICROSEMI

Looking for Pricing? Contact us for volume pricing.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Specification

Type

Parameter

2N6788 ID1

6.0A

2N6788 ID2

3.5A

2N6788 IDM

24A (pk)

2N6788 IS

6.0A

2N6788 Qg(on)

18.0 nC

2N6788 Qgd

9.0 nC

2N6788 Qgs

4.0 nC

2N6788 RDS(on)1

0.30Ω

2N6788 RDS(on)2

0.35Ω

2N6788 RDS(on)3

0.54Ω

2N6788 Td(off)

40 ns

2N6788 Td(on)

40 ns

2N6788 Tf

70 ns

2N6788 Tr

70 ns

2N6788 Trr

240 ns

2N6788 V(BR)DSS

100V

2N6788 VDG

100V

2N6788 VDS

100V

2N6788 VSD

1.8V

2N6790 ID1

3.5A

2N6790 ID2

2.25A

2N6790 IDM

14A (pk)

2N6790 IS

3.5A

2N6790 Qg(on)

14.3 nC

2N6790 Qgd

9.0 nC

2N6790 Qgs

3.0 nC

2N6790 RDS(on)1

0.80Ω

2N6790 RDS(on)2

0.85Ω

2N6790 RDS(on)3

1.50Ω

2N6790 Td(off)

50 ns

2N6790 Td(on)

40 ns

2N6790 Tf

50 ns

2N6790 Tr

50 ns

2N6790 Trr

400 ns

2N6790 V(BR)DSS

200V

2N6790 VDG

200V

2N6790 VDS

200V

2N6790 VSD

1.5V

Body Diode Continuous Current Max

3.5A

Body Diode Pulsed Current Max

14A

Breakdown Voltage

200V

Continuous Drain Current

3.5A

Continuous Drain Current (100C)

2.25A

Continuous Drain Current (25C)

3.5A

Continuous Drain Current 100C Max

2.25A

Diode Forward Voltage

1.5V

Drain Source On Resistance

0.92Ω

Drain Source On Voltage Max

2.8V

Drain Source Voltage

200V

Fall Time

50 ns

Forward Transconductance Max

4.5 S

Gate Drain Charge

9.0nC

Gate Source Charge

3.0nC

Gate Source Leakage Current Max

100 nA

Gate Source Voltage

±20V

Gate Threshold Voltage

2V ~ 4V

Input Capacitance

600pF

Max Continuous Drain Current

3.5A

Max Drain Source Voltage

200V

Max Power Dissipation

20W

Operating Temperature

-55°C ~ 150°C

Output Capacitance

300pF

Package

TO-205AF (formerly TO-39)

Power Dissipation

20W

Pulsed Drain Current

14A

Pulsed Drain Current Max

14A

Rds On

0.800Ω

Rds On 125C Max

1.5Ω

Reverse Recovered Charge Max

2.3 µC

Reverse Recovery Charge

4.3µC

Reverse Recovery Time

350 ns

Reverse Transfer Capacitance

30pF

Reverse Transfer Capacitance Max

80pF

Rise Time

50 ns

RoHS Status

RoHS Compliant

Supply Voltage

200V

Terminal

Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only)

Thermal Resistance Junction Case

6.25°C/W

Thermal Resistance Junction To Ambient

175°C/W

Thermal Resistance Junction To Case

6.25°C/W

Total Gate Charge

14.3nC

Turn Off Delay Time

50ns

Turn Off Delay Time Max

50 ns

Turn On Delay Time

40 ns

Weight

Approximately 1.064 grams

Zero Gate Voltage Drain Current 160V 125C Max

1000µA

Zero Gate Voltage Drain Current 200V Max

250µA

2N6790 [MICROSEMI]

Part No:

2N6790

Category:

Transistors

Manufacturer:

MICROSEMI

Description:

RoHS Status:

1. Is 2N6790 available for RFQ?

2. Why is there no fixed price for 2N6790?

3. What are the key specifications of 2N6790?

4. How fast can I get a quote for 2N6790?

5. How soon can 2N6790 be shipped?

6. Can you suggest alternatives to 2N6790?

Part Number:

2N6790

Manufacturer:

MICROSEMI

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Products Detail

Key Features

Application scenarios

Documents

Datasheets:

Feature