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    1. Home/
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    5. APTMC120TAM33CTPAG MICROSEMI

    APTMC120TAM33CTPAG [MICROSEMI]

    APTMC120TAM33CTPAG
    APTMC120TAM33CTPAG

    Part No:

    APTMC120TAM33CTPAG

    Category:

    Transistors

    Manufacturer:

    MICROSEMI

    Description:

    SiC MOSFET Power Module with 1200V and 33mΩ max R_DSon, designed for high-frequency switching applications.

    RoHS Status:

    Product FAQ

    1. Is APTMC120TAM33CTPAG available for RFQ?

    Yes. APTMC120TAM33CTPAG by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for APTMC120TAM33CTPAG?

    Pricing for APTMC120TAM33CTPAG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of APTMC120TAM33CTPAG?

    APTMC120TAM33CTPAG is a MICROSEMI Transistors with Diode Thermal Resistance Junction Case: 0.37°C/W and Operating Temperature Mosfet Max: 150°C. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for APTMC120TAM33CTPAG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can APTMC120TAM33CTPAG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to APTMC120TAM33CTPAG?

    Yes. If APTMC120TAM33CTPAG is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    APTMC120TAM33CTPAG

    Manufacturer:

    MICROSEMI

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Power Dissipation (25C)
    370W
    Gate Source Voltage
    -10V ~ 25V
    Pulsed Drain Current
    155A
    Gate Threshold Voltage
    1.7V ~ 2.2V
    Rds On
    33mΩ
    RoHS Status
    RoHS Compliant
    Weight
    250 g
    Case Temperature
    100°C
    Case Temperature Min
    -40°C
    Diode Forward Current
    30A
    Diode Peak Reverse Voltage
    1200V
    Diode Thermal Resistance Junction Case
    0.37°C/W
    Drain Current 25C
    78A
    Drain Current 80C
    58A
    Isolation Voltage
    4000V
    Mounting Torque
    3 N.m ~ 5 N.m
    Ntc Resistance 25C
    50kΩ
    Operating Temperature Diode Max
    175°C
    Operating Temperature Diode Min
    -40°C
    Operating Temperature Mosfet Max
    150°C
    Operating Temperature Mosfet Min
    -40°C
    Rds On 150C Max
    70mΩ
    Rds On 150C Min
    50mΩ
    Rds On 25C Max
    33mΩ
    Rds On 25C Min
    27mΩ
    Thermal Resistance Junction Case
    0.34°C/W
    Voltage
    1200V

    Products Detail

    Triple phase leg DSS SiC MOSFET Power Module featuring SiC Power MOSFET and SiC Schottky Diode for high-speed switching, low R_DS(on), and ultra-low loss. Includes very low stray inductance, Kelvin source for easy drive, internal thermistor for temperature monitoring, and AlN substrate for improved thermal performance. Benefits include outstanding high-frequency operation, direct mounting to heatsink, low thermal resistance, solderable terminals for easy PCB mounting, low profile, and RoHS compliance.

    Key Features

    • SiC Power MOSFET: High speed switching, Low R_DS(on), Ultra low loss
    • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
    • Very low stray inductance
    • Kelvin source for easy drive
    • Internal thermistor for temperature monitoring
    • High level of integration
    • AlN substrate for improved thermal performance

    Application scenarios

    • Welding converters
    • Switched Mode Power Supplies
    • Uninterruptible Power Supplies
    • Motor control

    Documents

    Datasheets:

    APTMC120TAM33CTPAG
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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