APT60M80JVR [MICROSEMI]

Name: APT60M80JVR
Brand: MICROSEMI
SKU: APT60M80JVR
Availability: InStock

Part No:

APT60M80JVR

Category:

Transistors

Manufacturer:

MICROSEMI

Description:

600V 55A 0.080Ω N-Channel enhancement mode power MOSFET.

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Continuous Drain Current

55A

Drain Source Voltage

600V

Pulsed Drain Current

220A

Gate Threshold Voltage

2V ~ 4V

Input Capacitance

14500pF

Output Capacitance

1571pF ~ 2200pF

Total Gate Charge

870 nC

Operating Temperature

-55°C ~ 150°C

Package

SOT-227 (ISOTOP®)

Avalanche Current

55A

Breakdown Voltage

600V

Continuous Source Current

55A

Diode Forward Voltage

1.3V

Drain Source On Resistance

0.080Ω

Fall Time

31 ns ~ 40 ns

Gate Drain Charge Max

440 nC

Gate Drain Charge Min

288 nC

Gate Source Charge Max

68 nC

Gate Source Charge Min

56 nC

Gate Source Leakage Current

±100 nA

Gate Source Voltage Continuous

±30V

Gate Source Voltage Transient

±40V

Input Capacitance Min

12022pF

Lead Temperature

300°C

Linear Derating Factor

4.54W/°C

On State Drain Current

55A

Pulsed Source Current

220A

Repetitive Avalanche Energy

50 mJ

Reverse Recovery Charge

29 µC

Reverse Recovery Time

937 ns

Reverse Transfer Capacitance Max

1010pF

Reverse Transfer Capacitance Min

668pF

Rise Time

25 ns ~ 50 ns

Single Pulse Avalanche Energy

3200 mJ

Thermal Resistance Junction Ambient

40°C/W

Thermal Resistance Junction Case

0.22°C/W

Total Gate Charge Min

576 nC

Total Power Dissipation

568W

Turn Off Delay Time Max

110 ns

Turn Off Delay Time Min

73 ns

Turn On Delay Time

30 ns

Turn On Delay Time Min

15 ns

Zero Gate Voltage Drain Current 125C

250µA

Zero Gate Voltage Drain Current 25C

25µA

Products Detail

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density, reduces on-resistance, and achieves faster switching speeds through optimized gate layout. Features include popular SOT-227 package, avalanche energy rating, faster switching, and lower leakage.

Key Features

SOT-227 (ISOTOP®) package
Avalanche energy rated
Faster switching
Lower leakage
600V drain-source voltage
55A continuous drain current
0.080Ω on-state resistance
Fast switching times
High avalanche energy capability (3200 mJ)

Documents

Datasheets:

APT60M80JVR-Microsemi-datasheet-130894.pdf

Product FAQ

1. Is APT60M80JVR available for RFQ?

Yes. APT60M80JVR by MICROSEMI is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for APT60M80JVR?

Pricing for APT60M80JVR can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of APT60M80JVR?

APT60M80JVR is a MICROSEMI Transistors with Zero Gate Voltage Drain Current 125C: 250µA and Thermal Resistance Junction Ambient: 40°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for APT60M80JVR?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can APT60M80JVR be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to APT60M80JVR?

Yes. If APT60M80JVR is unavailable, obsolete, or does not meet your required lead time, we can help check similar MICROSEMI Transistors parts or compatible alternatives.

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